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参数资料
| 型号： | MMBZ12VALT3G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| 中文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236 |
| 封装： | LEAD FREE, PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 70K |
| 代理商： | MMBZ12VALT3G |
MMBZ5V6ALT1 Series
http://onsemi.com
7
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31809
ISSUE AH
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
DIM
A
B
C
D
G
H
J
K
L
S
V
MIN
0.1102
0.0472
0.0385
0.0140
0.0670
0.0040
0.0034
0.0180
0.0350
0.0830
0.0177
MAX
0.1197
0.0551
0.0498
0.0200
0.0826
0.0098
0.0070
0.0236
0.0401
0.0984
0.0236
MIN
2.80
1.20
0.99
0.36
1.70
0.10
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.26
0.50
2.10
0.25
0.177
0.60
1.02
2.50
0.60
MILLIMETERS
INCHES
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 31801, 02, AND 06 OBSOLETE, NEW
STANDARD 31809.
1
3
2
A
L
B
S
V
G
D
H
C
K
J
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参数描述 |
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| MMBZ12VDG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
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| MMBZ12VDL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 8.5V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| MMBZ12VDL/DG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ12VDL215 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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