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参数资料
型号： MMBZ15VAL-7
厂商： DIODES INC
元件分类： TVS二极管 - 瞬态电压抑制
英文描述： 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
封装： PLASTIC PACKAGE-3
文件页数： 1/4页
文件大小： 78K
代理商： MMBZ15VAL-7
DS30306 Rev. 7 - 2
1 of 4
MMBZ5V6AL - MMBZ33VAL
www.diodes.com
Diodes Incorporated
MMBZ5V6AL - MMBZ33VAL
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
Dual TVS in Common Anode Configuration
24W/40W Peak Power Dissipation Rating @ 1.0ms
(Unidirectional)
225 mW Power Dissipation
Ideally Suited for Automatic Insertion
Low Leakage
Available in Lead Free/RoHS Compliant Version (Note 5)
Features
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
Pd
225
mW
Peak Power Dissipation (Note 2) MMBZ5V6AL - MMBZ10VAL
Ppk
24
W
Peak Power Dissipation (Note 2) MMBZ15VAL - MMBZ33VAL
Ppk
40
W
Thermal Resistance, Junction to Ambient Air (Note 1)
RqJA
556
°C/W
Operating and Storage Temperature Range
Tj,TSTG
–65 to +150
°C
Maximum Ratings @TA = 25°C unless otherwise specified
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 7, on Page 2
Marking: Marking Code & Date Code, See Page 2
Marking Code: See Table Below and Page 2
Ordering Information: See Page 2
ESD Rating Exceeding 16kV per the Human Body Model
(Note 4)
Weight: 0.008 grams (approximate)
Mechanical Data
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
T
C
U
D
O
R
P
W
E
N
@TA = 25°C unless otherwise specified
Electrical Characteristics
Type
Number
Marking
Code
VRWM
IR @
VRWM
Breakdown Voltage
VC @IPP (Note 2)
Typical
Temperature
Coefficient
VBR (Note 3) (V)
@ IT
VC
IPP
Volts
mA
Min
Nom
Max
mA
V
A
Tc (mV/
°C)
MMBZ5V6AL
K9A
3
5.0
5.32
5.6
5.88
20
8.0
3.0
1.8
24 Watt (VF = 0.9V max @ IF = 10mA)
Note:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Non-repetitive current pulse per Figure 2 and derate above TA = 25
°C per Figure 1.
3. Short duration pulse test used to minimize self-heating effect.
4. MMBZ5V6AL and MMBZ15VAL exceed 16kV ESD rating, all other voltages exceed 8kV ESD rating.
5. No purposefully added lead.
Type
Number
Marking
Code
VRWM
IR @
VRWM
Breakdown Voltage
VC @IPP (Note 2)
Typical
Temperature
Coefficient
VBR (Note 3) (V)
@ IT
VC
IPP
Volts
mA
Min
Nom
Max
mA
V
A
Tc (%/
°C)
MMBZ6V8AL
K9C
4.5
0.5
6.46
6.8
7.14
1.0
9.6
2.5
+0.045
MMBZ9V1AL
K9D
6.0
0.3
8.65
9.1
9.56
1.0
14
1.7
+0.065
MMBZ10VAL
K9E
6.5
0.3
9.50
10
10.5
1.0
14.2
1.7
+0.065
24 Watt (VF = 1.1V max @ IF = 200mA)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
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相关代理商/技术参数
参数描述
MMBZ15VAL-7-F 功能描述:TVS二极管阵列 15V 225mW RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
MMBZ15VALT1 功能描述:TVS二极管阵列 15V 225mW Dual RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
MMBZ15VALT1G 功能描述:TVS二极管阵列 15V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
MMBZ15VALT1G 制造商:ON Semiconductor 功能描述:TVS Diode
MMBZ15VALT3 功能描述:TVS二极管阵列 15V 225mW Dual RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
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