参数资料
| 型号： | MMBZ15VALT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | DIODE ZENER DUAL 40W 15V SOT-23 |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 10,000 |
| 电压 - 反向隔离（标准值）： | 12V |
| 电压 - 击穿： | 14.25V |
| 功率（瓦特）： | 40W |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
ELECTRICAL CHARACTERISTICS
(T A = 25 ? C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I PP
V C
V RWM
I R
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
I F
I
I R V F
V BR
I T
Q V BR
Breakdown Voltage @ I T
Test Current
Maximum Temperature Coefficient of V BR
V C V BR V RWM
I T
V
I F
Forward Current
V F
Z ZT
I ZK
Z ZK
Forward Voltage @ I F
Maximum Zener Impedance @ I ZT
Reverse Current
Maximum Zener Impedance @ I ZK
I PP
Uni ? Directional TVS
ELECTRICAL CHARACTERISTICS (T A = 25 ? C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V F = 0.9 V Max @ I F = 10 mA)
24 WATTS
Breakdown Voltage
Max Zener
Impedance (Note 5)
V C @ I PP
(Note 6)
Device*
Device
Marking
V RWM
Volts
I R @
V RWM
m A
V BR (Note 4) (V)
Min Nom Max
@ I T
mA
Z ZT
@ I ZT
W
Z ZK @ I ZK
W mA
V C
V
I PP
A
Q V BR
mV/ 5 C
MMBZ5V6ALT1G/T3G
MMBZ6V2ALT1G
MMBZ6V8ALT1G
MMBZ9V1ALT1G
5A6
6A2
6A8
9A1
3.0
3.0
4.5
6.0
5.0
0.5
0.5
0.3
5.32
5.89
6.46
8.65
5.6
6.2
6.8
9.1
5.88
6.51
7.14
9.56
20
1.0
1.0
1.0
11
?
?
?
1600
?
?
?
0.25
?
?
?
8.0
8.7
9.6
14
3.0
2.76
2.5
1.7
1.26
2.80
3.4
7.5
(V F = 0.9 V Max @ I F = 10 mA)
40 WATTS
Device*
Device
Marking
V RWM
Volts
I R @
V RWM
nA
Breakdown Voltage
V BR (Note 4) (V)
Min Nom Max
@ I T
mA
V C @ I PP (Note 6)
V C I PP
V A
Q V BR
mV/ 5 C
MMBZ12VALT1G
MMBZ15VALT1G
MMBZ18VALT1G
MMBZ20VALT1G
MMBZ27VALT1G/T3G
MMBZ33VALT1G
12A
15A
18A
20A
27A
33A
8.5
12
14.5
17
22
26
200
50
50
50
50
50
11.40
14.25
17.10
19.00
25.65
31.35
12
15
18
20
27
33
12.60
15.75
18.90
21.00
28.35
34.65
1.0
1.0
1.0
1.0
1.0
1.0
17
21
25
28
40
46
2.35
1.9
1.6
1.4
1.0
0.87
7.5
12.3
15.3
17.2
24.3
30.4
4. V BR measured at pulse test current I T at an ambient temperature of 25 ? C.
5. Z ZT and Z ZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I Z(AC)
= 0.1 I Z(DC) , with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 6 and derate per Figure 7
* Include SZ-prefix devices where applicable.
http://onsemi.com
3
相关PDF资料 |
PDF描述 |
|---|---|
| ICTE-36RL4 | TVS 1500W 36V UNIDIRECT AXIAL |
| 0034.6709 | FUSE 250MA 250V 8.5X8.5 T 18.8 |
| 0034.6706 | FUSE 125MA 250V 8.5X8.5 T 18.8 |
| MMA23-0141P1 | CONN RACK/PANEL 14POS 5A |
| 0034.6705 | FUSE 100MA 250V 8.5X8.5 T 18.8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ15VDA | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Zener Diodes, Dual |
| MMBZ15VDC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Zener Diodes, Dual |
| MMBZ15VDG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ15VDL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS 40W 12V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 12V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 12V, SOT23; Reverse Stand-Off Voltage Vrwm:12.8V; Breakdown Voltage Min:14.3V; Breakdown Voltage Max:15.8V; Clamping Voltage Vc Max:21.2V; Peak Pulse Current Ippm:1.9A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
| MMBZ15VDL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 12.8V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
发布紧急采购，3分钟左右您将得到回复。