参数资料
型号: MMBZ15VDA-GS18
厂商: VISHAY SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
封装: PLASTIC PACKAGE-3
文件页数: 1/4页
文件大小: 73K
代理商: MMBZ15VDA-GS18
VISHAY
MMBZ...VDA and C Series
Document Number 85808
Rev. 1.4, 08-Jul-04
Vishay Semiconductors
www.vishay.com
1
12
3
12
3
Common Cathode
Common Anode
MMBZ15VDC
MMBZ27VDC
MMBZ15VDA
MMBZ27VDA
18654
Small Signal Zener Diodes, Dual
Features
Dual Silicon Planar Zener Diodes with Common
Cathode or Common Anode configurations.
Dual package provides for Bidirectional or sepa-
rate unidirectional configurations.
The dual configurations protect two separate lines
with only one device.
Peak Power: 40 W @1 ms (Bidirectional) .
Ideal for ESD Protection.
For bidirectional operation, circuit connected to
pins 1 and 2. For unidirectional operation, circuit
connected to pins 1 and 3 or pins 2 and 3.
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Terminals: Solderable per MIL-STD-750, method
2026
Packaging Codes/Options:
GS18/ 10 k per 13 " reel (8 mm tape), 10 k/box
GS08/ 3 k per 7 " reel (8 mm tape), 15 k/box
Marking:
MMBZ15VDC = TC5
MMBZ27VDC = TC7
MMBZ15VDA = TA5
MMBZ27VDA = TA7
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Nonrepetitive current pulse per Figure 2 and derate above T
amb = 25 °C per Figure 3.
2) FR-5 = 1.0 x 0.75 x 0.62 in.
3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5 % alumina.
4) The MMBZ6V8DC/A is rated at 24 V.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Peak power dissipation1)
PPK
404)
W
Power dissipation
on FR-5 Board2)
Tamb = 25 °C
Derate above 25 °C
Ptot
225
1.8
mW
mW/°C
Power dissipation
on Alumina Substrate3)
Tamb = 25 °C
Derate above 25 °C
Ptot
300
2.4
mW
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambiant air
RthJA
556
°C/W
Operating and storage temperature range
Tj, Tstg
- 55 to + 150
°C
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