- 您现在的位置：买卖IC网 > PDF目录81135 > MMBZ15VDA-V (VISHAY SEMICONDUCTORS) 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE PDF资料下载
参数资料
| 型号： | MMBZ15VDA-V |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 196K |
| 代理商： | MMBZ15VDA-V |
www.vishay.com
2
Document Number 85808
Rev. 1.4, 28-Oct-05
MMBZ...VDA-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Note:
1) V
BR measured at pulse test current IT at an ambient temperature of 25 °C
2) Surge current waveform per Figure 2 and derate per Figure 3
Typical Characteristics (Tamb = 25
°C unless otherwise specified)
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambiant air
RthJA
556
°C/W
Operating and storage temperature range
Tj, Tstg
- 55 to + 150
°C
Partnumber
Breakdown
Voltage1)
Test
Current
Working
Peak
Reverse
Voltage
Max.
Reverse
Leakage
Current
Max.
Reverse
Surge
Current
Max. Reverse
Voltage
(Clamping
Voltage)
Max.
Temperature
Coefficient
Max. Forward
Voltage
VBR at IT
IT
VRWM
IR
IPP
VC @ IRSM
2)
at VBR
VF
@ IF
V
mA
V
nA
A
V
mV/°C
V
mA
min
max
MMBZ15VDA-V
14.30
15.80
1.0
12.8
100
1.9
21.2
16
0.9
200
MMBZ27VDA-V
25.65
28.35
1.0
22.0
80
1.0
38.0
30
1.1
200
Figure 1. Steady State Power Derating Curve
0
25
50
75
100
125
150
175
50
0
300
100
150
200
250
P
tot
,
P
O
W
ER
DISSIP
A
TION
(mW)
ALUMINA SUBSTRATE
FR-5 BOARD
T, Temperature( °C)
18655
Figure 2. Pulse Waveform
100
50
0
1
2
3
4
V
alue(%)
t, Time (ms)
tr
tp
Peak Value - IRSM
Half Value -
RSM
I
2
Pulse width (tp) is defined
as that point where the
peak current decays to
50%ofI
tr
≤ 10 s
RSM
18656
相关PDF资料 |
PDF描述 |
|---|---|
| MQDLTS-5 | 500 W, UNIDIRECTIONAL, 15 ELEMENT, SILICON, TVS DIODE |
| MSP6122AUS | BIDIRECTIONAL, SILICON, TVS DIODE |
| MP2510WGP | 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| MA30KP150CATR | 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MA30KP150CTR | 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ15VDC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Zener Diodes, Dual |
| MMBZ15VDG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ15VDL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS 40W 12V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 12V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 12V, SOT23; Reverse Stand-Off Voltage Vrwm:12.8V; Breakdown Voltage Min:14.3V; Breakdown Voltage Max:15.8V; Clamping Voltage Vc Max:21.2V; Peak Pulse Current Ippm:1.9A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
| MMBZ15VDL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 12.8V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| MMBZ15VDL/DG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
发布紧急采购，3分钟左右您将得到回复。