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参数资料
| 型号： | MMBZ15VDC-GS18 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 73K |
| 代理商： | MMBZ15VDC-GS18 |
www.vishay.com
2
Document Number 85808
Rev. 1.4, 08-Jul-04
VISHAY
MMBZ...VDA and C Series
Vishay Semiconductors
Electrical Characteristics
Note:
1) V
BR measured at pulse test current IT at an ambient temperature of 25 °C
2) Surge current waveform per Figure 2 and derate per Figure 3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Partnumber
Breakdown
Voltage1)
Test
Current
Working
Peak
Reverse
Voltage
Max.
Reverse
Leakage
Current
Max.
Reverse
Surge
Current
Max. Reverse
Voltage
(Clamping
Voltage)
Max.
Temperature
Coefficient
Max. Forward
Voltage
VBR at IT
IT
VRWM
IR
IPP
VC @ IRSM
2)
at VBR
VF
@ IF
V
mA
V
nA
A
V
mV/°C
V
mA
min
max
MMBZ15VDA
14.70
15.30
1.0
12.8
100
1.9
21.2
16
0.9
200
MMBZ27VDA
26.46
27.54
1.0
22.0
80
1.0
38.0
30
1.1
200
MMBZ15VDC
14.30
15.80
1.0
12.8
100
1.9
21.2
16
0.9
200
MMBZ27VDC
25.65
28.35
1.0
22.0
80
1.0
38.0
30
1.1
200
Figure 1. Steady State Power Derating Curve
0
25
50
75
100
125
150
175
50
0
300
100
150
200
250
P
tot
,P
O
W
ER
DISSIP
A
TION
(mW)
ALUMINA SUBSTRATE
FR-5 BOARD
T, Temperature( °C)
18655
Figure 2. Pulse Waveform
100
50
0
1
2
3
4
V
alue(%)
t, Time (ms)
tr
tp
Peak Value - IRSM
Half Value - RSM
I
2
Pulse width (tp) is defined
as that point where the
peak current decays to
50 % of I
tr ≤ 10 s
RSM
18656
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