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参数资料
| 型号： | MMBZ15VDLT3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB |
| 文件页数： | 1/5页 |
| 文件大小： | 55K |
| 代理商： | MMBZ15VDLT3 |
61
MOTOROLA
MMBZ15VDLT1 MMBZ27VCLT1
15 & 27 Volt SOT-23 Dual
Monolithic Common
Cathode Zeners
Transient Voltage Suppressors
for ESD Protection
These dual monolithic silicon zener diodes are designed for applications
requiring transient overvoltage protection capability. They are intended for use
in voltage and ESD sensitive equipment such as computers, printers, business
machines, communication systems, medical equipment and other applications.
Their dual junction common cathode design protects two separate lines using
only one package. These devices are ideal for situations where board space is
at a premium.
Specification Features:
SOT–23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Peak Power — 40 Watts @ 1.0 ms (Bidirectional), per Figure 5 Waveform
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 100 nA
ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
Mechanical Characteristics:
Void Free, Transfer–Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel. Replace
the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel.
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (1)
@ TA ≤ 25°C
Ppk
40
Watts
Total Power Dissipation on FR–5 Board (2) @ TA = 25°C
Derate above 25
°C
°PD°
225
1.8
°mW°
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
556
°C/W
Total Power Dissipation on Alumina Substrate (3) @ TA = 25°C
Derate above 25
°C
°PD°
300
2.4
°mW
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature Range
TJ
Tstg
°– 55 to +150°
°C
Lead Solder Temperature — Maximum (10 Second Duration)
TL
230
°C
1. Non–repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
2. FR–5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBZ15VDLT1/D
Motorola, Inc. 1996
Rev 1
MMBZ15VDLT1
MMBZ27VCLT1
SOT–23
COMMON CATHODE
DUAL ZENER
OVERVOLTAGE
TRANSIENT SUPPRESSORS
40 WATTS
PEAK POWER
CASE 318–08
TO–236AB
LOW PROFILE SOT–23
Motorola Preferred Devices
TERMINAL 1 – ANODE
TERMINAL 2 – ANODE
TERMINAL 3 – CATHODE
1
3
2
1
2
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ15VDLT3G | 功能描述:TVS二极管阵列 15V 225mW Dual Common Cathode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ18VA | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:SMALL SIGNAL ZENER DIODES 300m WATTS 3-26 VOLTS |
| MMBZ18VAL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS 40W 14.5V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 14.5V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 14.5V, SOT23; Reverse Stand-Off Voltage Vrwm:14.5V; Breakdown Voltage Min:17.1V; Breakdown Voltage Max:18.9V; Clamping Voltage Vc Max:25V; Peak Pulse Current Ippm:1.6A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
| MMBZ18VAL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 14.5V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| MMBZ18VAL/DG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
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