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参数资料
| 型号： | MMBZ18VAL-7 |
| 厂商： | DIODES INC |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 78K |
| 代理商： | MMBZ18VAL-7 |
DS30306 Rev. 7 - 2
3 of 4
MMBZ5V6AL - MMBZ33VAL
www.diodes.com
01
2
3
320
0
40
80
120
160
200
240
280
C,
CAP
A
CIT
A
NCE
(pF)
BIAS (V)
Fig. 3 Typical Capacitance vs. Bias Voltage
(Lower curve is Bidirectional mode,
Upper curve is Unidirectional mode)
MMBZ5V6AL
f= 1MHz
01
2
3
80
0
10
20
30
40
50
60
70
C,
CAP
A
CIT
A
NCE
(pF)
BIAS (V)
Fig. 4 Typical Capacitance vs. Bias Voltage
(Lower curve is Bidirectional mode,
Upper curve is Unidirectional mode)
MMBZ15VAL
MMBZ27VAL
f = 1MHz
0.1
1.0
PULSE WIDTH (ms)
Fig. 6 Pulse Rating Curve,
P
(W) vs. Pulse Width (ms)
pk
Power is defined as P
= V x I
pkC
pp
0.1
10
100
1.0
10
1000
10000
T= 25
°C
j
P
,
PEAK
PULSE
P
OWER
(W)
pk
100
Non Repetitive
Pulse Waveform
(Rectangular)
Unidirectional
Bidirectional
T
C
U
D
O
R
P
W
E
N
0
50
100
200
150
250
300
0
25
50
75
100
125
150
175
P
,
POWER
D
ISSIP
A
T
ION
(mW)
D
T , AMBIENT TEMPERATURE
A
Fig. 5 Steady State Power Derating Curve
FR-5 Board
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ18VAL-7-F | 功能描述:TVS二极管阵列 18V 225mW RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ18VALT1 | 功能描述:TVS二极管阵列 18V 225mW Dual RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ18VALT1G | 功能描述:TVS二极管阵列 15V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ18VALT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ18VALT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
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