型号: | MMBZ20VCL/DG |
厂商: | NXP SEMICONDUCTORS |
元件分类: | 参考电压二极管 |
英文描述: | TVS DIODE, TO-236AB |
封装: | HALOGEN FREE, PLASTIC, SMD, 3 PIN |
文件页数: | 1/15页 |
文件大小: | 79K |
代理商: | MMBZ20VCL/DG |
相关PDF资料 |
PDF描述 |
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MBR30H60CTHE3/45 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
MBRB30H35CTHE3/45 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
MBRB30H50CTHE3/45 | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
MBRF30H60CTHE3/45 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
MBR10H100HE3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
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MMBZ20VDG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
MMBZ27VA | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:SMALL SIGNAL ZENER DIODES 300m WATTS 3-26 VOLTS |
MMBZ27VAL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 22V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 22V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 22V, SOT23; Reverse Stand-Off Voltage Vrwm:22V; Breakdown Voltage Min:25.65V; Breakdown Voltage Max:28.35V; Clamping Voltage Vc Max:40V; Peak Pulse Current Ippm:1A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
MMBZ27VAL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 22V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
MMBZ27VAL,235 | 功能描述:ESD 抑制器 LO CAP UNIDI DBL ESD PROTECTION DIODE RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |