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参数资料
| 型号： | MMBZ27VDA-VGS08 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 40 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 70K |
| 代理商： | MMBZ27VDA-VGS08 |
MMBZ27VDA-V
Vishay Semiconductors
Document Number 81294
Rev. 1.1, 15-Sep-10
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Electrical Characteristics
Note:
1) V
BR measured at pulse test current IT at an ambient temperature of 25 °C
2) Surge current waveform per figure 2 and derate per figure 3
Typical Characteristics (Tamb = 25 °C, unless otherwise specified)
Part number
Breakdown
voltage 1)
Test
current
Working
peak
reverse
voltage
Max.
reverse
leakage
current
Max.
reverse
surge
current
Max. reverse
voltage
(clamping
voltage)
Max.
temperature
coefficient
Max. Forward
voltage
VBR at IT
IT
VRWM
IR
IPP
VC at IRSM
2)
at VBR
VF
at IF
V
mA
V
nA
A
V
mV/°C
V
mA
min.
max.
MMBZ27VDA-V
25.65
28.35
1
22
801
38
30
1.1
200
Figure 1. Steady State Power Derating Curve
Figure 2. Pulse Waveform
0
25
50
75
100
125
150
175
50
0
300
100
150
200
250
P
tot
,P
O
W
ER
DISSIP
A
TIO
N
(m
W
)
ALUMINA SUBSTRATE
FR-5 BOARD
T, Temperature (°C)
18655
100
50
0
1
2
3
4
5
Val
u
e
(
%
)
t - Time (ms)
t
r
t
p
Peak value - I
RSM
Half value -
I
RSM
2
Pulse width (t
p) is defined as that
point where the peak current
decays to 50 % of I
RSM tr ≤ 10 s
18656
Figure 3. Pulse Derating Curve
0
25
50
75 100 125 150 175 200
0
25
50
75
T
A - Ambient Temperature (°C)
Peak
p
u
lse
derating
in
%
of
peak
po
w
er
or
c
u
rrent
at
T
A
=
25
Z
(°C)
100
18657
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ27VDA-V-GS08 | 功能描述:稳压二极管 27 Volt 40 Watt Common Anode RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMBZ27VDA-V-GS18 | 功能描述:稳压二极管 27 Volt 40 Wat Common Anode RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMBZ27VDC | 制造商:VISHAY SEMICONDUCTOR 功能描述:LEADED |
| MMBZ27VDC | 制造商:VISHAY SEMICONDUCTOR 功能描述:LEADED |
| MMBZ27VDC-GS08 | 制造商:Vishay Semiconductors 功能描述: |
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