参数资料
| 型号： | MMBZ33VAL-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | TVS 26V 40W CA UNI-DIR SOT23-3 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 26V |
| 电压 - 击穿： | 31.35V |
| 功率（瓦特）： | 40W |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 剪切带 (CT) |
| 其它名称： | MMBZ33VALDICT |
MMBZ5V6AL - MMBZ33VAL
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation
Peak Power Dissipation
MMBZ5V6AL - MMBZ10VAL
MMBZ15VAL - MMBZ33VAL
(Note 6)
(Note 6)
P pk
P pk
24
40
W
W
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
(Note 5)
(Note 5)
P D
R θ JA
T J , T STG
225
556
-65 to +150
mW
°C/W
°C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
24 Watt (V F = 0.9V max @ I F = 10mA)
Type
Number
Marking
Code
V RWM
Max
Reverse
Current, I R
@ V RWM
(Note 7)
Breakdown Voltage
V BR (Note 7) (V)
@ I T
Max. Clamping Voltage,
V C @ I PP (Note 6)
V C I PP
Typical
Temperature
Coefficient
of Reverse
Voltage
Volts
μA
Min
Nom
Max
mA
V A TC (mV/°C)
MMBZ5V6AL
K9A
3
5.0
5.32
5.6
5.88
20
8.0 3.0 1.8
24 Watt (V F = 0.9V max @ I F = 10mA)
Type
Number
Marking
Code
V RWM
Max
Reverse
Current, I R
@ V RWM
(Note 7)
Breakdown Voltage
V BR (Note 7) (V)
@ I T
Max. Clamping Voltage,
V C @ I PP (Note 6)
V C I PP
Typical
Temperature
Coefficient
of Reverse
Voltage
Volts
μA
Min
Nom
Max
mA
V A TC (%/°C)
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
K9B
K9C
K9D
K9E
3.0
4.5
6.0
6.5
0.5
0.5
0.3
0.3
5.89
6.46
8.65
9.50
6.2
6.8
9.1
10
6.51
7.14
9.56
10.5
1.0
1.0
1.0
1.0
8.7 2.76 +0.04
9.6 2.5 +0.045
14 1.7 +0.065
14.2 1.7 +0.065
40 Watt (V F = 0.9V max @ I F = 10mA)
Type
Number
Marking
Code
V RWM
Max.
Reverse
Current, I R
@ V RWM
(Note 7)
Breakdown Voltage
V BR (Note 7) (V)
@ I T
Max. Clamping Voltage,
V C @ I PP (Note 6)
V C I PP
Typical
Temperature
Coefficient
of Reverse
Voltage
Volts
nA
Min
Nom
Max
mA
V
A
TC (%/°C)
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
K9K
K9L
K9N
K9Q
K9T
12
14.5
17
22
26
50
50
50
50
50
14.25
17.10
19.00
25.65
31.35
15
18
20
27
33
15.75
18.90
21.00
28.35
34.65
1.0
1.0
1.0
1.0
1.0
21
25
28
40
46
1.9
1.6
1.4
1.0
0.87
+0.080
+0.090
+0.090
+0.090
+0.090
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
6. Non-repetitive current pulse per Figure 2 and derate above T A = +25°C per Figure 2.
7. Short duration pulse test used to minimize self-heating effect.
8. MMBZ5V6AL and MMBZ15VAL exceed 16kV ESD rating, all other voltages exceed 8kV ESD rating.
MMBZ5V6AL - MMBZ33VAL
Document number: DS30306 Rev. 14 - 2
2 of 6
January 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| MMBZ27VAL-7 | TVS 22V 40W CA UNI-DIR SOT23-3 |
| 2-34162-1 | CONN RING 14-16 AWG #1/4 |
| MMBZ15VAL-7 | TVS 12V 40W CA UNI-DIR SOT23-3 |
| 70234-115 | 70234-115 METRAL HDR 4RX4M STR P |
| 70234-111 | 70234-111 METRAL HDR 4RX4M STR P |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ33VAL-7-F | 功能描述:TVS二极管阵列 33V 225mW RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ33VALT1 | 功能描述:TVS二极管阵列 33V 225mW Dual RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ33VALT1G | 功能描述:TVS二极管阵列 33V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ33VALT1G | 制造商:ON Semiconductor 功能描述:TVS Diode |
| MMBZ33VALT3 | 功能描述:TVS二极管阵列 33V 225mW Dual RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
发布紧急采购，3分钟左右您将得到回复。