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参数资料
| 型号： | MMBZ33VAL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | TVS-瞬态抑制二极管 |
| 英文描述： | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| 中文描述： | 20W和40W峰值功率齐纳瞬态电压抑制器 |
| 文件页数： | 5/8页 |
| 文件大小： | 70K |
| 代理商： | MMBZ33VAL |
MMBZ5V6ALT1 Series
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0.1
1
10
100
1000
1
10
100
Power is defined as V
RSM
x I
Z
(pk) where V
RSM
is
the clamping voltage at
I
Z
(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, T
A
= 25
°
C
BIDIRECTIONAL
MMBZ5V6ALT1
Figure 5. Pulse Waveform
V100
50
0
0
1
2
3
4
t, TIME (ms)
Figure 6. Pulse Derating Curve
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF I
PP
.
HALF VALUE
I
PP
2
t
P
t
r
≤
10 s
PEAK VALUE I
PP
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 7. Maximum Nonrepetitive Surge
Power, P
pk
versus PW
Figure 8. Maximum Nonrepetitive Surge
Power, P
pk
(NOM) versus PW
0.1
1
10
100
1000
1
10
100
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, T
A
= 25
°
C
BIDIRECTIONAL
MMBZ5V6ALT1
Power is defined as V
Z
(NOM) x I
Z
(pk) where
V
Z
(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
P
P
A
°
C
P
p
,
P
p
,
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ33VAL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 26V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
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| MMBZ33VAL-7 | 功能描述:TVS 二极管 - 瞬态电压抑制器 33V 225mW RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| MMBZ33VAL-7-F | 功能描述:TVS二极管阵列 33V 225mW RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
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