参数资料
| 型号： | MMBZ33VALT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | DIODE ZENER DUAL 40W 33V SOT-23 |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 10,000 |
| 电压 - 反向隔离（标准值）： | 26V |
| 电压 - 击穿： | 31.35V |
| 功率（瓦特）： | 40W |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
TYPICAL CHARACTERISTICS
18
15
12
1000
100
10
9
1
6
3
0.1
0
? 40
0
+ 50
+ 100
+ 150
0.01
? 40
+ 25
+ 85
+ 125
320
280
240
TEMPERATURE ( ? C)
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
60
50
TEMPERATURE ( ? C)
Figure 2. Typical Leakage Current
versus Temperature
200
160
120
80
40
5.6 V
15 V
40
30
20
10
33 V
27 V
0
0
1
2
3
0
0
1
2
3
BIAS (V)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
300
BIAS (V)
Figure 4. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
250
200
150
100
50
ALUMINA SUBSTRATE
FR ? 5 BOARD
0
0
25
50
75 100 125
150
175
TEMPERATURE ( ? C)
Figure 5. Steady State Power Derating Curve
http://onsemi.com
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ33VALT3G | 功能描述:TVS二极管阵列 33V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ33VCL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 26V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 26V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 26V, SOT23, Reverse Stand-Off Voltage Vrwm:26V, Breakdown Voltage Min:31.35V, Breakdown Voltage Max:34.65V, Clamping Voltage Vc Max:46V, Peak Pulse Current Ippm:870mA, Diode Case Style:SOT-23, No. of Pins:3 , RoHS Compliant: Yes |
| MMBZ33VCL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 26V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| MMBZ33VCL/DG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ33VCL215 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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