参数资料
| 型号： | MMBZ33VALT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | DIODE ZENER DUAL 40W 33V SOT-23 |
| 产品变化通告： | Wire Change 08/Jun/2009 Product Obsolescence 21/Jan/2010 |
| 标准包装： | 10,000 |
| 电压 - 反向隔离（标准值）： | 26V |
| 电压 - 击穿： | 31.35V |
| 功率（瓦特）： | 40W |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
ELECTRICAL CHARACTERISTICS
(T A = 25 ? C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I PP
V C
V RWM
I R
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
I F
I
I R V F
V BR
I T
Q V BR
Breakdown Voltage @ I T
Test Current
Maximum Temperature Coefficient of V BR
V C V BR V RWM
I T
V
I F
Forward Current
V F
Z ZT
I ZK
Z ZK
Forward Voltage @ I F
Maximum Zener Impedance @ I ZT
Reverse Current
Maximum Zener Impedance @ I ZK
I PP
Uni ? Directional TVS
ELECTRICAL CHARACTERISTICS (T A = 25 ? C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V F = 0.9 V Max @ I F = 10 mA)
24 WATTS
Breakdown Voltage
Max Zener
Impedance (Note 5)
V C @ I PP
(Note 6)
Device*
Device
Marking
V RWM
Volts
I R @
V RWM
m A
V BR (Note 4) (V)
Min Nom Max
@ I T
mA
Z ZT
@ I ZT
W
Z ZK @ I ZK
W mA
V C
V
I PP
A
Q V BR
mV/ 5 C
MMBZ5V6ALT1G/T3G
MMBZ6V2ALT1G
MMBZ6V8ALT1G
MMBZ9V1ALT1G
5A6
6A2
6A8
9A1
3.0
3.0
4.5
6.0
5.0
0.5
0.5
0.3
5.32
5.89
6.46
8.65
5.6
6.2
6.8
9.1
5.88
6.51
7.14
9.56
20
1.0
1.0
1.0
11
?
?
?
1600
?
?
?
0.25
?
?
?
8.0
8.7
9.6
14
3.0
2.76
2.5
1.7
1.26
2.80
3.4
7.5
(V F = 0.9 V Max @ I F = 10 mA)
40 WATTS
Device*
Device
Marking
V RWM
Volts
I R @
V RWM
nA
Breakdown Voltage
V BR (Note 4) (V)
Min Nom Max
@ I T
mA
V C @ I PP (Note 6)
V C I PP
V A
Q V BR
mV/ 5 C
MMBZ12VALT1G
MMBZ15VALT1G
MMBZ18VALT1G
MMBZ20VALT1G
MMBZ27VALT1G/T3G
MMBZ33VALT1G
12A
15A
18A
20A
27A
33A
8.5
12
14.5
17
22
26
200
50
50
50
50
50
11.40
14.25
17.10
19.00
25.65
31.35
12
15
18
20
27
33
12.60
15.75
18.90
21.00
28.35
34.65
1.0
1.0
1.0
1.0
1.0
1.0
17
21
25
28
40
46
2.35
1.9
1.6
1.4
1.0
0.87
7.5
12.3
15.3
17.2
24.3
30.4
4. V BR measured at pulse test current I T at an ambient temperature of 25 ? C.
5. Z ZT and Z ZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I Z(AC)
= 0.1 I Z(DC) , with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 6 and derate per Figure 7
* Include SZ-prefix devices where applicable.
http://onsemi.com
3
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