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参数资料
| 型号： | MMBZ4710-V |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 25 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 79K |
| 代理商： | MMBZ4710-V |
MMBZ4681-V to MMBZ4717-V
Vishay Semiconductors
Document Number 85771
Rev. 1.6, 15-Sep-10
www.vishay.com
3
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Typical Characteristics (Tamb = 25 °C, unless otherwise specified)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb = 25 °C
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
0
120
160
0
100
300
400
500
600
P
tot
-
Total
Po
w
er
Dissipation
(m
W
)
T
amb - Ambient Temperature (°C)
200
95 9602
200
80
40
10
15
20
1
10
100
1000
V
Z
-
V
oltage
Change
(m
V
)
VZ - Z-Voltage (V)
25
95 9598
T
j = 25 °C
I
Z = 5 mA
0
5
- 60
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
-
Relative
Voltage
Change
Tj - Junction Temperature (°C)
240
95 9599
0
V
Ztn = VZt/VZ (25 °C)
0
TKVZ = 10 x 10
-4/K
8 x 10-4/K
2 x 10-4/K
6 x 10-4/K
4 x 10-4/K
- 4 x 10-4/K
- 2 x 10-4/K
Figure 4. Temperature Coefficient of VZ vs. Z-Voltage
Figure 5. Diode Capacitance vs. Z-Voltage
Figure 6. Forward Current vs. Forward Voltage
- 5
0
5
10
15
VZ - Z-Voltage (V)
95 9600
I
Z = 5 mA
0
1020
30
4050
TK
V
Z
-
Temperat
u
re
Coefficient
of
V
Z
(10
-4
/K)
10
15
0
50
100
150
200
C
D
-
Diode
Capacitance
(pF)
VZ - Z-Voltage (V)
25
95 9601
20
T
j = 25 °C
V
R = 2 V
0
5
0
0.2
0.4
0.6
0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I F
-
For
w
ard
C
u
rrent
(mA)
VF - Forward Voltage (V)
T
j = 25 °C
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