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参数资料
| 型号： | MMBZ5230BT/R13 |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 4.7 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 101K |
| 代理商： | MMBZ5230BT/R13 |
PAGE . 4
June 11.2010-REV.00
MOUNTING PAD LAYOUT
Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMATION
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
MMBZ5221B~MMBZ5262B
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| MMBZ5237BV | 8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
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| MMBZ5247BWT/R7 | 17 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5248BT/R7 | 18 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ5230BTS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:TRIPLE SURFACE MOUNT ZENER DIODE ARRAY |
| MMBZ5230BTS-7 | 功能描述:稳压二极管 200MW 4.7V RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMBZ5230BTS-7-F | 功能描述:稳压二极管 200MW 4.7V RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MMBZ5230BTW | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:TRIPLE ISOLATED 200mW ZENERS |
| MMBZ5230BV | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
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