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参数资料
| 型号： | MMBZ5231-V-G-8 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 5.1 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | GREEN PACKAGE-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 76K |
| 代理商： | MMBZ5231-V-G-8 |
MMBZ5225-V-G to MMBZ5267-V-G
Document Number 85183
Rev. 1.0, 19-Oct-09
Vishay Semiconductors
www.vishay.com
1
18078
12
3
For technical support, please contact: DiodesSSP@vishay.com
Small Signal Zener Diodes
Features
Silicon planar power zener diodes
Standard zener voltage tolerance is ± 5 %
with a “B” suffix (e.g.: MMBZ5225B-V-G),
suffix “C” is ± 2 % tolerance
High temperature soldering guaranteed:
260 °C/4 x 10 s at terminals
Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
AEC-Q101 qualified
Mechanical Data
Case: SOT23
Weight: approx. 8.8 mg
Packaging codes/options:
-18/10K per 13" reel (8 mm tape), 10K/box
-08/3K per 7" reel (8 mm tape), 15K/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Notes
1) On FR - 5 board using recommended solder pad layout
2) On alumina substrate
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Note
1) On FR - 5 board using recommended solder pad layout
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Parameter
Test condition
Symbol
Value
Unit
Zener current
(see table “Characteristics”)
Power dissipation
TA = 25 °C
Ptot
225 1)
mW
Ptot
300 2)
mW
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
RthJA
556 1)
°C/W
Maximum junction temperature
Tj
150
°C
Storage temperature range
TS
- 65 to + 175
°C
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