参数资料
型号: MMBZ5231BLT1
厂商: MOTOROLA INC
元件分类: 参考电压二极管
英文描述: 5.1 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB
封装: PLASTIC, CASE 318-07, 3 PIN
文件页数: 10/20页
文件大小: 258K
代理商: MMBZ5231BLT1
1SMB5913BT3 Series
Motorola TVS/Zener Device Data
7-156
3 Watt DC Power Data Sheet
Devices listed in bold, italic are Motorola preferred devices.
Figure 1. Steady State Power Derating
0
25
50
75
100
125
150
6
5
4
3
2
0
T, TEMPERATURE (
°C)
P
,MAXIMUM
POWER
DISSIP
A
TION
(W
A
TTS)
D
10
20
30
50
100
200
300
500
1K
0.1
0.2 0.3 0.5
1
2
3
5
10
20 30 50
100
PW, PULSE WIDTH (ms)
P
,PEAK
SURGE
POWER
(W
A
TTS)
PK
Figure 2. Maximum Surge Power
RECTANGULAR
NONREPETITIVE
WAVEFORM
TJ =25°C PRIOR
TO INITIAL PULSE
Figure 3. Zener Voltage — To 12 Volts
2
4
6
8
10
12
10
8
6
4
2
0
–2
–4
VZ, ZENER VOLTAGE (VOLTS)
,TEMPERA
TURE
COEFFICIENT
(mV/
C)
°
θ VZ
Figure 4. VZ = 3.3 thru 10 Volts
01
2
3
4
5
6
7
8910
100
50
30
20
10
1
0.5
0.3
0.2
0.1
VZ, ZENER VOLTAGE (VOLTS)
I,
ZENER
CURRENT
(mA)
Z
2
5
3
Figure 5. VZ = 12 thru 82 Volts
0
1020
30
405060
70
8090
100
VZ, ZENER VOLTAGE (VOLTS)
I
,ZENER
CURRENT
(mA)
Z
100
50
30
20
10
1
0.5
0.3
0.2
0.1
2
5
3
Figure 6. Effect of Zener Voltage
VZ, ZENER VOLTAGE (VOLTS)
5
7
10
20
30
50
70
100
200
100
70
50
30
20
10
7
5
3
2
Z
,DYNAMIC
IMPEDANCE
(OHMS)
Z
1
VZ @ IZT
10mA
IZ(dc) = 1mA
20mA
iZ(rms) = 0.1 IZ(dc)
TL
TA
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MMBZ5231BLT1G 制造商:ON Semiconductor 功能描述:Zener Diode 制造商:ON Semiconductor 功能描述:ZENER DIODE, 225mW, 5.1V, SOT-23
MMBZ5231BLT3 功能描述:稳压二极管 5.1V 225mW RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel
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MMBZ5231BNL 制造商:Fairchild Semiconductor Corporation 功能描述: