参数资料
型号: MMBZ5243BL99Z
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 齐纳二极管
英文描述: 13 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
文件页数: 1/3页
文件大小: 40K
代理商: MMBZ5243BL99Z
MMBZ5226B
-
MMBZ5257B
Series
Tolerance: B = 5%
Electrical Characteristics
TA = 25°C unless otherwise noted
CONNECTION
DIAGRAM
2 NC
3
1
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Parameter
Value
Units
Storage Temperature Range
-55 to +150
°C
Maximum Junction Operating Temperature
+ 150
°C
Total Device Dissipation
Derate above 25
°C
350
1.8
mW
mW/
°C
*These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
Device
Mark
VZ
(V)
ZZ
(
)
IZT
(mA)
ZZK
(
)
IZK
(mA)
VR
(V)
IR
(
A)
MMBZ 5226B
MMBZ 5227B
MMBZ 5228B
MMBZ 5229B
8A
8B
8C
8D
3.3
3.6
3.9
4.3
28
24
23
22
20
1,600
1,700
1,900
1,000
0.25
1.0
25
15
10
5.0
MMBZ 5230B
MMBZ 5231B
MMBZ 5232B
MMBZ 5233B
8E
8F
8G
8H
4.7
5.1
5.6
6.0
19
17
11
7.0
20
1,900
1,600
0.25
2.0
3.0
3.5
5.0
MMBZ 5234B
MMBZ 5235B
MMBZ 5236B
MMBZ 5237B
8J
8K
8L
8M
6.2
6.8
7.5
8.2
7.0
5.0
6.0
8.0
20
1,000
750
500
0.25
4.0
5.0
6.0
6.5
5.0
3.0
MMBZ 5238B
MMBZ 5239B
MMBZ 5240B
MMBZ 5241B
MMBZ 5242B
8N
8P
8Q
8R
8S
8.7
9.1
10
11
12
8.0
10
17
22
30
20
600
0.25
6.5
7.0
8.0
8.4
9.1
3.0
2.0
1.0
VF Foward Voltage = 0.9 V Maximum @ IF = 10 mA for all MMBZ 5200 series
@
NOTE: National preferred devices in BOLD
MMBZ5226B - MMBZ5257B Series Zeners
SOT-23
3
1
2
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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