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参数资料
| 型号： | MMBZ5250BD87Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 20 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 文件页数： | 1/7页 |
| 文件大小： | 812K |
| 代理商： | MMBZ5250BD87Z |
MMBZ5226B
-
MMBZ5257B
Series
MMBZ5226B-MMBZ5257B Rev A2
Tolerance: B = 5%
Electrical Characteristics
TA = 25°C unless otherwise noted
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
TSTG
Storage Temperature Range
-55 to +150
°C
TJ
Maximum Junction Operating
Temperature
+ 150
°C
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
mW
mW/
°C
*These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
Device
Mark
VZ
(V)
ZZ
(
)
IZT
(mA)
ZZK
(
)
IZK
(mA)
VR
(V)
IR
(
A)
MMBZ 5226B
MMBZ 5227B
MMBZ 5228B
MMBZ 5229B
8A
8B
8C
8D
3.3
3.6
3.9
4.3
28
24
23
22
20
1,600
1,700
1,900
1,000
0.25
1.0
25
15
10
5.0
MMBZ 5230B
MMBZ 5231B
MMBZ 5232B
MMBZ 5233B
8E
8F
8G
8H
4.7
5.1
5.6
6.0
19
17
11
7.0
20
1,900
1,600
0.25
2.0
3.0
3.5
5.0
MMBZ 5234B
MMBZ 5235B
MMBZ 5236B
MMBZ 5237B
8J
8K
8L
8M
6.2
6.8
7.5
8.2
7.0
5.0
6.0
8.0
20
1,000
750
500
0.25
4.0
5.0
6.0
6.5
5.0
3.0
MMBZ 5238B
MMBZ 5239B
MMBZ 5240B
MMBZ 5241B
MMBZ 5242B
8N
8P
8Q
8R
8S
8.7
9.1
10
11
12
8.0
10
17
22
30
20
600
0.25
6.5
7.0
8.0
8.4
9.1
3.0
2.0
1.0
VF Foward Voltage = 0.9 V Maximum @ IF = 10 mA for all MMBZ 5200 series
@
NOTE: National preferred devices in BOLD
MMBZ5226B - MMBZ5257B Series Zeners
SOT-23
3
1
2
2001 Fairchild Semiconductor Corporation
CONNECTION
DIAGRAM
2 NC
3
1
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