参数资料
| 型号： | MMBZ6V8ALT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/7页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER DUAL 24W CA 6.8V SOT23 |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 10 |
| 电压 - 反向隔离（标准值）： | 4.5V |
| 电压 - 击穿： | 6.46V |
| 功率（瓦特）： | 24W |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 剪切带 (CT) |
| 其它名称： | MMBZ6V8ALT1OSCT |
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
TYPICAL CHARACTERISTICS
t r ? 10 m s
PULSE WIDTH (t P ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
100
90
80
100
50% OF I PP .
PEAK VALUE ? I PP
70
60
50
t P
HALF VALUE ?
I PP
2
50
40
30
20
10
0
0
1
2
3
4
0
0
25
50 75 100 125 150 175
200
t, TIME (ms)
Figure 6. Pulse Waveform
T A , AMBIENT TEMPERATURE ( ? C)
Figure 7. Pulse Derating Curve
100
10
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, T A = 25 ? C
BIDIRECTIONAL
100
10
RECTANGULAR
WAVEFORM, T A = 25 ? C
BIDIRECTIONAL
UNIDIRECTIONAL
1
0.1
1
10
100
1000
1
0.1
1
10
100
1000
PW, PULSE WIDTH (ms)
Figure 8. Maximum Non ? repetitive Surge
Power, P pk versus PW
Power is defined as V RSM x I Z (pk) where V RSM is
the clamping voltage at I Z (pk).
http://onsemi.com
5
PW, PULSE WIDTH (ms)
Figure 9. Maximum Non ? repetitive Surge
Power, P pk (NOM) versus PW
Power is defined as V Z (NOM) x I Z (pk) where
V Z (NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ6V8ALT1G | 功能描述:TVS二极管阵列 6.8V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ6V8ALT1G | 制造商:ON Semiconductor 功能描述:TVS Diode 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY, 40W, 6.8V, SOT-23 |
| MMBZ6V8ALT3 | 功能描述:TVS二极管阵列 6.8V 225mW Dual RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ9V1AL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 6V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 6V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 6V, SOT23, Reverse Stand-Off Voltage Vrwm:6V, Breakdow 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 6V, SOT23, Reverse Stand-Off Voltage Vrwm:6V, Breakdown Voltage Min:8.65V, Breakdown Voltage Max:9.56V, Clamping Voltage Vc Max:14V, Peak Pulse Current Ippm:1.7A, Diode Case Style:SOT-23, No. of Pins:3 , RoHS Compliant: Yes |
| MMBZ9V1AL,215 | 功能描述:ESD 抑制器 1Ch 14V 1.7A RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
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