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参数资料
| 型号： | MMBZ6V8DC |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 34K |
| 代理商： | MMBZ6V8DC |
MMBZ6V8DC/A thru MMBZ27VDC/A
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88358
2
21-May-02
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Type
Breakdown Voltage
VBR (Volts)
(1)
Min
Nom
Max
@IT
mA
Working
Peak
Reverse
Voltage
VRWM
(Volts)
Max
Reverse
Leakage
Current IR
(nA)
Max
Reverse
Surge
Current IPP
(Amps)
Max Reverse
Voltage
@ IRSM
(2)
(Clamping Voltage)
VC
(Volts)
Max
Temperature
Coefficient of
VBR (mV/°C)
Max Forward
Voltage
VF
(Volts)
@IF
(mA)
MMBZ6V8D
6.48
6.8
7.14
1.0
4.5
500
2.5
9.6
3.4
1.1
200
MMBZ15VD
14.30
15.00
15.80
1.0
12.8
100
1.9
21.2
16
0.9
200
MMBZ27VD
25.65
27.00
28.35
1.0
22.0
80
1.0
38.0
30
1.1
200
Notes: (1) VBR measured at pulse test current IT at an ambient temperature of 25°C
(2) Surge current waveform per Figure 2 and derate per Figure 3
0
25
50
75
100
125
150
175
200
0
25
50
100
75
0
25
50
75
100
125
150
175
50
0
300
100
150
200
250
100
50
0
1
2
3
4
FIG. 1 - STEADY STATE POWER DERATING CURVE
PULSE WIDTH (tp) is DEFINED
as that POINT WHERE the PEAK
CURRENT DECAYS to 50% of
IRSM tr
≤10s
tr
HALF VALUE – IRSM
2
PEAK VALUE – IRSM
tp
FIG. 2 - PULSE WAVEFORM
FIG. 3 - PULSE DERATING CURVE
P
D
,PO
WER
DISSIP
A
TION
(mW)
V
ALUE(%)
t, TIME (ms)
TA, AMBIENT TEMPERATURE (°C)
PEAK
PULSE
DERA
TING
IN
%
OF
PEAK
PO
WER
OR
CURRENT
@
T
A
=25Z(
°C)
ALUMINA SUBSTRATE
FR-5 BOARD
T, Temperature (°C)
0.59 (15)
0.2 (5)
0.03 (0.8)
0.30 (7.5)
0.12 (3)
.04 (1)
0.06 (1.5)
0.20 (5.1)
.08 (2)
.04 (1)
0.47 (12)
Layout for R
ΘJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in. (0.3mm)
Dimensions in inches (millimeters)
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
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