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参数资料
| 型号： | MMDF2C01HDR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 5.2 A, 20 V, 0.045 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/16页 |
| 文件大小： | 344K |
| 代理商： | MMDF2C01HDR2 |
Semiconductor Components Industries, LLC, 2000
September, 2004 Rev. XXX
1
Publication Order Number:
MMDF2C01HD/D
MMDF2C01HD
Preferred Device
Power MOSFET
2 Amps, 12 Volts
Complementary SO8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a very low reverse recovery time.
MiniMOS
t devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dcdc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives.
Ultra Low R
DS(on) Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
DSS Specified at Elevated Temperature
Mounting Information for SO8 Package Provided
Rating
Symbol
Value
Unit
DraintoSource Voltage
NChannel
PChannel
VDSS
20
12
Vdc
GatetoSource Voltage
VGS
± 8.0
Vdc
Drain Current Continuous
NChannel
PChannel
Pulsed
NChannel
PChannel
ID
IDM
5.2
3.4
48
17
A
Operating and Storage Temperature Range
TJ and
Tstg
55 to
150
°C
Total Power Dissipation @ TA= 25°C
(Note 2.)
PD
2.0
Watts
Thermal Resistance Junction to Ambient
(Note 2.)
RθJA
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds.
TL
260
°C
1. Negative signs for PChannel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
NSource
1
2
3
4
8
7
6
5
Top View
NGate
PSource
PGate
NDrain
PDrain
2 AMPERES
12 VOLTS
RDS(on) = 45 mW (NChannel)
RDS(on) = 180 mW (PChannel)
Device
Package
Shipping
ORDERING INFORMATION
MMDF2C01HDR2
SO8
2500 Tape & Reel
http://onsemi.com
D
S
G
PChannel
D
S
G
NChannel
SO8, Dual
CASE 751
STYLE 14
LYWW
MARKING
DIAGRAM
D2C01
D2C01 = Device Code
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
1
8
Preferred devices are recommended choices for future use
and best overall value.
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| MMDF2C02HDR2 | 3.8 A, 20 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
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| MMDF2P01HDR2 | 3.4 A, 12 V, 0.18 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF2C02E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
| MMDF2C02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
| MMDF2C03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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