参数资料
型号: MMDF2C02ER2
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 3.6 A, 25 V, 0.1 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: MINIATURE, CASE 751-07, SO-8
文件页数: 3/10页
文件大小: 231K
代理商: MMDF2C02ER2
MMDF2C02E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
V(BR)DSS
25
Vdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
IDSS
(N)
(P)
1.0
mAdc
GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th)
1.0
2.0
3.0
Vdc
DraintoSource OnResistance
(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
RDS(on)
(N)
(P)
0.100
0.250
Ohm
DraintoSource OnResistance
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
(N)
(P)
0.200
0.400
Ohm
OnState Drain Current
(VDS = 5.0 Vdc, VGS = 4.5 Vdc)
ID(on)
(N)
(P)
2.0
Adc
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
(N)
(P)
1.0
2.6
2.8
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
(N)
(P)
380
340
532
475
pF
Output Capacitance
Coss
(N)
(P)
235
220
329
300
Transfer Capacitance
Crss
(N)
(P)
55
75
110
150
SWITCHING CHARACTERISTICS (Note 5)
TurnOn Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc, RG = 9.1 Ω)
(VDD = 10 Vdc, ID = 1.0 Adc,
VGS = 5.0 Vdc, RG = 25 Ω)
td(on)
(N)
(P)
10
20
30
40
ns
Rise Time
tr
(N)
(P)
35
40
70
80
TurnOff Delay Time
td(off)
(N)
(P)
19
53
38
106
Fall Time
tf
(N)
(P)
25
41
50
82
TurnOn Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 Ω)
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 Ω)
td(on)
(N)
(P)
7.0
13
21
26
Rise Time
tr
(N)
(P)
17
29
30
58
TurnOff Delay Time
td(off)
(N)
(P)
27
30
48
60
Fall Time
tf
(N)
(P)
18
28
30
56
3. Negative signs for PChannel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
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