- 您现在的位置：买卖IC网 > PDF目录95977 > MMDF2P02HDR2 (MOTOROLA INC) 3300 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | MMDF2P02HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3300 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 7/10页 |
| 文件大小： | 257K |
| 代理商： | MMDF2P02HDR2 |
MMDF2P02HD
6
Motorola TMOS Power MOSFET Transistor Device Data
I S
,SOURCE
CURRENT
t, TIME
di/dt = 300 A/
s
Standard Cell Density
High Cell Density
tb
trr
ta
trr
Figure 11. Reverse Recovery Time (trr)
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance – Gen-
eral Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded, and that the transition
time (tr, tf) does not exceed 10 s. In addition the total power
averaged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θJC).
A power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and must be adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction tem-
perature.
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 13). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
A
V
ALANCHE
ENERGY
(mJ)
0
25
50
75
100
125
150
250
150
350
100
200
300
50
ID = 6 A
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
10
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
0.1
dc
10 ms
1
100
Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06”
thick single sided) with one die operating, 10s max.
1 ms
100
s
相关PDF资料 |
PDF描述 |
|---|---|
| MMDF2P03HDR2 | 2 A, 30 V, 0.22 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| MMDF3207R2 | 7800 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDF3304R2 | 7300 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDF3304 | 7300 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDF3N03HDR2 | 2.8 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF2P02HDR2G | 功能描述:MOSFET PFET SO8D 20V 3.3A 160mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF2P03HD | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 30 Volts Pa??Channel SOa??8, Dual |
| MMDF2P03HDR2 | 制造商:ON Semiconductor 功能描述: |
| MMDF3200Z | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS |
| MMDF3207 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS |
发布紧急采购，3分钟左右您将得到回复。