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参数资料
| 型号： | MMDJ3N03BJT |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES |
| 中文描述： | 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, SO-8 |
| 封装： | SO-8 |
| 文件页数： | 3/4页 |
| 文件大小： | 122K |
| 代理商： | MMDJ3N03BJT |
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 751–05
ISSUE P
SEATING
1
4
5
8
C
K
4
A
0.25 (0.010)
M
T B
S
S
0
B
M
8X
D
R
M
J
X
F
–A–
–B–
–T–
DIM
A
B
C
D
F
G
J
K
M
P
R
MIN
4.80
3.80
1.35
0.35
0.40
1.27 BSC
0.18
0.10
0
5.80
0.25
MAX
5.00
4.00
1.75
0.49
1.25
MILLIMETERS
0.25
0.25
7
6.20
0.50
G
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
STYLE 16:
PIN 1.
EMITTER, DIE #1
BASE, DIE #1
EMITTER, DIE #2
BASE, DIE #2
COLLECTOR, DIE #2
COLLECTOR, DIE #2
COLLECTOR, DIE #1
COLLECTOR, DIE #1
2.
3.
4.
5.
6.
7.
8.
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相关代理商/技术参数 |
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|---|---|
| MMDJ3P03BJT | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
| MMDJ-65608EV-30 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608EV-30-E | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608EV-45 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608L-25 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
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