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| 型号： | MMDL301T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 89K |
| 描述： | DIODE SCHOTTKY 200MW 30V SOD-323 |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 3,000 |
| 二极管类型： | 肖特基 - 单 |
| 电压 - 峰值反向(最大)： | 30V |
| 电容@ Vr, F： | 1.5pF @ 15V，1MHz |
| 功率耗散（最大）： | 200mW |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 带卷 (TR) |
?
Semiconductor Components Industries, LLC, 2010
September, 2010?
Rev. 2
1
Publication Order Number:
MMDL301T1/D
MMDL301T1G
Silicon Hot-Carrier Diodes
Schottky Barrier Diode
These devices are designed primarily for high?efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low?cost, high?volume consumer
and industrial/commercial requirements. They are available in a
Surface Mount package.
Features
?
Extremely Low Minority Carrier Lifetime ?
15 ps (Typ)
?
Very Low Capacitance ?
1.5 pF (Max) @ V
R
= 15 V
?
Low Reverse Leakage ?
I
R
= 13 nAdc (Typ)
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 125
°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board,
(Note 1) @TA
= 25
°C
Derate above 25°C
PD
200
1.57
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
635
°C/W
Junction and Storage Temperature Range
TJ, Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?5 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR
= 10
A)
V(BR)R
30
?
?
V
Total Capacitance
(VR
= 15 V, f = 1.0 MHz) Figure 1
CT
?
0.9
1.5
pF
Reverse Leakage
(VR
= 25 V) Figure 3
IR
?
13
200
nAdc
Forward Voltage
(IF
= 1.0 mAdc) Figure 4
VF
?
0.38
0.45
Vdc
Forward Voltage
(IF
= 10 mAdc) Figure 4
VF
?
0.52
0.6
Vdc
30 VOLTS SILICON
HOT?CARRIER DETECTOR
AND SWITCHING DIODES
Device Package Shipping?
ORDERING INFORMATION
1
CATHODE
2
ANODE
MMDL301T1G SOD?323
(Pb?Free)
3000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
PLASTIC
SOD?323
CASE 477
STYLE 1
4T = Device Code
M = Date Code*
= Pb?Free Package
*Date Code orientation may vary depending
upon manufacturing location.
MARKING DIAGRAM
(Note: Microdot may be in either location)
1
2
4T M
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDL301T1G | 功能描述:肖特基二极管与整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMDL6050 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Switching Diode |
| MMDL6050T1 | 功能描述:二极管 - 通用，功率，开关 70V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMDL6050T1G | 功能描述:二极管 - 通用，功率，开关 70V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMDL707 | 制造商:LUGUANG 制造商全称:Shenzhen Luguang Electronic Technology Co., Ltd 功能描述:Schottky Barrier Diode |
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