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参数资料
| 型号： | MMDL914T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 90K |
| 描述： | DIODE SWITCH FAST 100V SOD323 |
| 产品变化通告： | Wire Change 08/Jun/2009 |
| 标准包装： | 10 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 100V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 10mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 4ns |
| 电流 - 在 Vr 时反向漏电： | 5µA @ 75V |
| 电容@ Vr, F： | 4pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 剪切带 (CT) |
| 其它名称： | MMDL914T1OSCT |
?
Semiconductor Components Industries, LLC, 2013
July, 2013 ?
Rev. 9
1
Publication Order Number:
MMDL914T1/D
MMDL914T1G,
SMMDL914T1G,
MMDL914T3G
High-Speed Switching
Diode
Features
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC?Q101 Qualified and
PPAP Capable
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
V
Forward Current
IF
200
mA
Non?Repetitive Peak Forward Surge
Current 60 Hz
IFSM(surge)
500
mA
Repetitive Peak Forward Current
(Note 2)
IFRM
1.0
A
Non?Repetitive Peak Forward Current
(Square Wave, TJ
= 25
°C prior to
surge)
t = 1 s
t = 10 s
t = 100 s
t = 1 ms
t = 1 s
IFSM
36.0
18.0
6.0
3.0
0.7
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
TA
= 25
°C (Note 1)
Derate above 25°C
PD
200
1.57
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient
RJA
635
°C/W
Junction and Storage Temperature
TJ, Tstg
?55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 Minimum Pad.
2. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, TJ
= 25
°C prior to surge.
http://onsemi.com
SOD?323
CASE 477
STYLE 1
MARKING DIAGRAM
1
CATHODE
2
ANODE
Device Package Shipping?
ORDERING INFORMATION
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
5D M
MMDL914T1G SOD?323
(Pb?Free)
3,000 /
Tape & Reel
5D = Specific Device Code
M = Date Code
= Pb?Free Package
(Note: Microdot may be in either location)
MMDL914T3G SOD?323
(Pb?Free)
10,000 /
Tape & Reel
SMMDL914T1G SOD?323
(Pb?Free)
3,000 /
Tape & Reel
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDL914T1G | 功能描述:二极管 - 通用，功率，开关 100V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMDL914T1G | 制造商:ON Semiconductor 功能描述:SWITCHING DIODE 200mA 100V SOD-323 |
| MMDL914T1G_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High-Speed Switching Diode |
| MMDL914T1H | 制造商:ON Semiconductor 功能描述: |
| MMDL914T3G | 功能描述:二极管 - 通用，功率，开关 SS SWITCHING DIODE RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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