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参数资料
| 型号： | MMDT2222A |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-6 |
| 文件页数： | 1/5页 |
| 文件大小： | 929K |
| 代理商： | MMDT2222A |
MMDT2222A
NPN
Plastic-Encapsulate
Transistors
Features
Epitaxial Die Construction
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
75
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
0.6
A
PC
Collector Dissipation
0.15
W
RθJA
Thermal Resistance Junction to Ambient
833
℃/W
TJ
Operating Junction Temperature
-55 to +150
℃
TSTG
Storage Temperature
-55 to +150
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
40
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10uAdc, IE=0)
75
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=10uAdc, IC=0)
6
---
Vdc
ICBO
Collector Cutoff Current
(VCB=60Vdc, IE=0Vdc)
---
10
nAdc
ICEX
Collector Cutoff Current
(VCE=60Vdc,VEB(OFF)=3Vdc)
---
10
nAdc
IEBO
Emitter Cutoff Current
(VEB=3Vdc, IC=0Vdc)
---
10
nAdc
IBL
Base Cutoff Current
(VCE=60Vdc,VEB(OFF)=3Vdc)
---
20
nAdc
hFE
DC Current Gain
(IC=0.1mAdc, VCE=10Vdc)
(IC=1mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)
(IC=500mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=1Vdc)
35
50
75
100
40
35
---
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
---
0.3
1.0
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
0.6
---
1.2
2.0
Vdc
omponents
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MCC
SOT-363
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.004
.012
0.10
0.30
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026
0.65Nominal
F
.012
.016
0.30
0.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.035
.039
0.90
1.00
L
.010
.016
0.25
0.40
M
.004
.016
0.10
0.25
J
M
A
C
B
G
H
K
D
F
L
DIMENSIONS
Small Surface Mount Package
Marking:K1P
Revision: 2
2006/05/13
TM
Micro Commercial Components
C
2
B
1
E
1
E
2
B
2
C
1
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT2222A_09 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:DUAL SURFACE MOUNT NPN TRANSISTORS |
| MMDT2222A_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2222A_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN Plastic-Encapsulate Transistors |
| MMDT2222A_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2222A-7 | 功能描述:两极晶体管 - BJT 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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