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参数资料
| 型号： | MMDT2227 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 2/3页 |
| 文件大小： | 79K |
| 代理商： | MMDT2227 |
NPN 2222A Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=
mAdc, IB=0)
40
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10uAdc, IE=0)
75
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=10uAdc, IC=0)
6
---
Vdc
ICBO
Collector Cutoff Current
(VCB=60Vdc,IE=0)
---
10
nAdc
ICEX
Collector Cutoff Current
(VCE=60Vdc,IB=0)
---
10
nAdc
IEBO
Emitter Cutoff Current
(VEB=3Vdc,IC=0)
---
10
nAdc
hFE
DC Current Gain
(IC=0.1mAdc, VCE=10Vdc)
(IC=1mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=
50mAdc, VCE=10Vdc)
(IC=
00mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=1Vdc)
35
50
75
100
40
35
---
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
---
0.3
1.0
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
0.6
---
1.20
2.0
Vdc
fT
Current Gain-Bandwidth Product
(VCE=20Vdc, IC=20mAdc, f=100MHz)
300
---
MHz
Cob
Output Capacitance
(VCB=10Vdc, f=1.0MHz, IE=0)
---
8.0
pF
NF
Noise Figure
(VCE=10V,IC=0.1mA, f=1KHz, RS=1k
)
---
4.0
dB
PNP 2907A Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-10mAdc, IB=0)
-60
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-10uAdc, IE=0)
-60
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=-10uAdc, IC=0)
-5
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-50Vdc,IE=0)
---
-10
nAdc
ICEX
Collector Cutoff Current
(VEB=--30Vdc,IC=0)
---
-50
nAdc
hFE
DC Current Gain
(IC=-0.1mAdc, VCE=-10Vdc)
(IC=-1mAdc, VCE=-10Vdc)
(IC=-10mAdc, VCE=-10Vdc)
(IC=-150mAdc, VCE=-10Vdc)
(IC=-500mAdc, VCE=-10Vdc)
75
100
50
---
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(IC=-500mAdc, IB=-50mAdc)
---
-0.4
-1.6
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(IC=-500mAdc, IB=-50mAdc)
---
-1.3
-2.6
Vdc
fT
Current Gain-Bandwidth Product
(VCE=-20Vdc, IC=-50mAdc, f=100MHz)
200
---
MHz
Cob
Output Capacitance
(VCB=-5Vdc, f=1.0MHz, IE=0)
---
8
pF
MCC
TM
Micro Commercial Components
Revision: 1
2006/11/23
www.mccsemi.com
2 of 3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT2227_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2227_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2227-7 | 功能描述:两极晶体管 - BJT 40 / 60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2227-7-F | 功能描述:两极晶体管 - BJT 40 / 60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2227A | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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