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参数资料
| 型号： | MMDT3906 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | GREEN, PLASTIC PACKAGE-6 |
| 文件页数： | 1/4页 |
| 文件大小： | 200K |
| 代理商： | MMDT3906 |
MMDT3906
PNP/PNP Multi-Chip Transistor
FEATURES
Ideal for low power amplification and switching
MECHANICAL DATA
Case: SOT-363 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-200
mA
Collector Power Dissipation
PC
200
mW
Thermal Resistance, Junction to Ambient
RΘJA
625
/W
℃
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=-10A,IE=0
VCBO
-40
V
Collector-emitter breakdown voltage
IC=-1mA,IB=0
VCEO
-40
V
Emitter-base breakdown voltage
IE=-10A,IC=0
VEBO
-5
V
Collector-base cut-off current
VCE=-30V,VBE(off)=-3V
ICEX
-50
nA
Emitter-base cut-off current
VEB=-5V,IC=0
IEBO
-50
nA
VCE=-1V,IC=-0.1mA
hFE1
60
V
VCE=-1V,IC=-1mA
hFE2
80
V
VCE=-1V,IC=-10mA
hFE3
100
300
V
VCE=-1V,IC=-50mA
hFE4
60
V
DC current gain
VCE=-1V,IC=-100mA
hFE5
30
V
IC=-10mA,IB=-1mA
VCE(sat)1
-0.25
V
Collector-emitter saturation voltage
IC=-50mA,IB=-5mA
VCE(sat)2
-0.4
V
IC=-10mA,IB=-1mA
VBE(sat)1
-0.65
-0.85
V
Base-emitter saturation voltage
IC=-50mA,IB=-5mA
VBE(sat)2
-0.95
V
Transition frequency
VCE=-20V,IC=-10mA,
f=100MHz
fT
250
MHz
Collector output capacitance
VCB=-5V,IE=0,f=1MHz
Cob
4.5
pF
Noise figure
VCE=-5V,IC=-0.1mA,f=1kHz
,Rg=1K
NF
4
dB
Delay time
Td
35
nS
Rise time
VCC=-3V, VBE=-0.5V
IC=-10mA , IB1=-IB2=-1mA
Tr
35
nS
Storage time
Ts
225
nS
Fall time
VCC=-3V, IC=-10mA
IB1=-IB2=-1mA
Tf
75
nS
REV. 1, Oct-2010, KSTR03
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相关代理商/技术参数 |
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|---|---|
| MMDT3906_06 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR |
| MMDT3906_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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| MMDT3906-7 | 功能描述:两极晶体管 - BJT -40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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