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参数资料
| 型号： | MMDT4403 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SOT-363, 6 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 139K |
| 代理商： | MMDT4403 |
MMDT4403
PNP
Plastic-Encapsulate
Transistors
Features
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
Rating
Rating(PNP)
Unit
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.6
A
PC
Collector Dissipation
0.2
W
TJ
Operating Junction Temperature
-55 to +150
TSTG
Storage Temperature
-55 to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
40
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
40
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=100uAdc, IC=0)
5
---
Vdc
ICBO
Collector Cutoff Current
(VCB=50Vdc,IE=0)
---
0.1
uAdc
IEBO
Emitter Cutoff Current
(VEB=-5Vdc,IC=0)
---
0.1
uAdc
hFE
DC Current Gain
(IC=0.1mAdc, VCE=1Vdc)
(IC=1mAdc, VCE=1Vdc)
(IC=10mAdc, VCE=1Vdc)
(IC=150mAdc, VCE=2Vdc)
(IC=500mAdc, VCE=2Vdc)
30
60
100
20
---
----
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
---
0.75
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
0.75
---
5
1.3
Vdc
fT
Current Gain-Bandwidth Product
(VCE=10.0Vdc, IC=20mAdc, f=100MHz)
200
---
MHz
Cob
Output Capacitance
(VCB=10Vdc, f=1.0MHz, IE=0)
---
8.5
pF
td
Delay Time
---
15
ns
tr
Rise Time
VCC=30V,IC=150mA,
VBE=2.00V, IB1=15.00mA
tS
Storage Time
---
225
ns
tf
Fall Time
VCC=30V, IC=150mA,
IB1=IB2=15mA
---
30
ns
SOT-363
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.004
.012
0.10
0.30
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026
0.65Nominal
F
.012
.016
0.30
0.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.035
.039
0.90
1.00
L
.010
.016
0.25
0.40
M
.004
.016
0.10
0.25
J
M
A
C
B
G
H
K
D
F
L
DIMENSIONS
Revision: 3
2007/03/06
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
0.4
0.95
20
ns
---
TM
Micro Commercial Components
Epitaxial Planar Die Construction
Ideal for Low Power Amplification
and Switching
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
Marking:K4M/K2T
www.mccsemi.com
1 of 3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT4403_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4403_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Plastic-Encapsulate Transistors |
| MMDT4403_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT4403-7 | 功能描述:两极晶体管 - BJT -40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT4403-7-F | 功能描述:两极晶体管 - BJT -40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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