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参数资料
| 型号： | MMFT107T1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | MEDIUM POWER TMOS FET 250 mA, 200 VOLTS |
| 中文描述： | 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件页数： | 2/6页 |
| 文件大小： | 118K |
| 代理商： | MMFT107T1 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 10
μ
A)
V(BR)DSS
200
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 130 V, VGS = 0)
IDSS
—
—
30
nAdc
Gate–Body Leakage Current — Reverse
(VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IGSS
—
—
10
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
1.0
—
3.0
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 200 mA)
RDS(on)
—
—
14
Ohms
Drain–to–Source On–Voltage
(VGS = 10 V, ID = 200 mA)
VDS(on)
—
—
2.8
Vdc
Forward Transconductance
(VDS = 25 V, ID = 250 mA)
gfs
—
300
—
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
25 V V
Ciss
Coss
Crss
—
60
—
pF
Output Capacitance
—
30
—
Transfer Capacitance
—
6.0
—
SOURCE DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
(VGS = 0,
IS = 250 mA)
VF
IS
—
0.8
—
V
Continuous Source Current, Body
Diode
—
—
250
mA
Pulsed Source Current, Body Diode
ISM
—
—
500
1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
2.5
2
1.5
1
0.5
0
10
8
6
4
2
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
3 V
VGS = 10 V
500
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I
0
5
4
3
2
1
0
–55
°
C
25
°
C
TJ = 25
°
C
4 V
5 V
6 V
400
300
200
100
VDS = 10 V
TJ = 125
°
C
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相关代理商/技术参数 |
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|---|---|
| MMFT107T1D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 250 mA, 200 Volts |
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