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参数资料
| 型号： | MMFT107T3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Power MOSFET 250 mA, 200 Volts |
| 中文描述： | 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 118K |
| 代理商： | MMFT107T3 |
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
10
0
100
0
–55
°
C
25
°
C
8
6
4
2
VGS = 10 V
TJ = 125
°
C
R
Figure 3. On–Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
200
300
400
500
10
1
0.1–75
–50
–25
0
25
50
75
100
125
150
Figure 4. On–Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (
°
C)
R
I
1
0.1
0.010
VSD, SOURCE–DRAIN DIODE FORWARD VOLTAGE (VOLTS)
0.3
0.6
0.9
1.2
1.5
Figure 5. Source–Drain Diode Forward Voltage
TJ = 125
°
C
25
°
C
ID = 1 A
VGS = 10 V
250
200
150
100
50
0
0
5
10
15
20
25
30
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
C
VGS = 0 V
f = 1 MHz
TJ = 25
°
C
Ciss
Coss
Crss
V
g
10
9
8
7
6
5
4
3
2
1
0
0
0.5
1
1.5
Qg, TOTAL GATE CHARGE (nC)
2
2.5
3
3.5
4
4.5
5
2
1.5
1
0.5
0
100
0
200
300
400
500
Figure 7. Gate Charge versus Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 8. Transconductance
ID = 200 mA
VDS = 100 V
160 V
VDS = 10 V
TJ = –55
°
C
125
°
C
25
°
C
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相关代理商/技术参数 |
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| MMFT108T1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS FET TRANSISTOR N-CHANNEL - ENHANCEMENT |
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| MMFT1N10ET3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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