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参数资料
| 型号： | MMFT3055VT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 207K |
| 代理商： | MMFT3055VT1 |
Publication Order Number:
MMFT3055V/D
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
MMFT3055V
Power MOSFET
1 Amp, 60 Volts
NChannel SOT223
These Power MOSFETs are designed for low voltage, high speed
switching applications in power supplies, converters and power motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
PbFree Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 MW)
VDGR
60
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 25
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp ≤ 10 ms)
ID
IDM
1.7
1.4
6.0
Adc
Apk
Total PD @ TA = 25°C mounted on 1″ sq.
Drain pad on FR4 bd material
Total PD @ TA = 25°C mounted on
0.70″ sq. Drain pad on FR4 bd material
Total PD @ TA = 25°C mounted on min.
Drain pad on FR4 bd material
Derate above 25°C
PD
2.1
1.7
0.94
6.3
W
mW/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 3.4 Apk, L = 10 mH, RG = 25 W )
EAS
58
mJ
Thermal Resistance
Junction to Ambient on 1″ sq.
Drain padon FR4 bd material
Junction to Ambient on 0.70″ sq.
Drain pad on FR4 bd material
Junction to Ambient on min.
Drain pad on FR4 bd material
RqJA
70
88
159
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 s
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1 AMPERE, 60 VOLTS
RDS(on) = 130 mW
D
G
S
1
2
3
4
NChannel
Device
Package
Shipping
ORDERING INFORMATION
MMFT3055VT1
SOT223
1000 Tape & Reel
TO261AA
CASE 318E
STYLE 3
A
= Assembly Location
Y
= Year
W
= Work Week
G
= PbFree Package
V3055 = Device Code
MARKING DIAGRAM AND
PIN ASSIGNMENT
3
Source
2
Drain
1
Gate
4 Drain
MMFT3055VT1G
SOT223
(PbFree)
1000 Tape & Reel
http://onsemi.com
(Note: Microdot may be in either location)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
AYW
V3055 G
G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT3055VT3 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
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| MMFT5P03HDT1 | 功能描述:MOSFET P-CH 30V 3.7A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MMFT5P03HDT3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS P-CHANNEL FIELD FEECT TRANSISTOR |
| MMFT6N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER 6.0 AMPERES 30 VOLTS |
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