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参数资料
| 型号： | MMFT6661T3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 1/34页 |
| 文件大小： | 325K |
| 代理商： | MMFT6661T3 |
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4–84
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Medium Power Field Effect
Transistor
N–Channel Enhancement–Mode
Silicon Gate TMOS
SOT–223 for Surface Mount
This TMOS medium power field effect transistor is designed for
high speed, low loss power switching applications such as
switching regulators, dc–dc converters, solenoid and relay drivers.
The device is housed in the SOT–223 package which is designed
for medium power surface mount applications.
Silicon Gate for Fast Switching Speeds
RDS(on) = 4.0 Ohm Max
Low Drive Requirement, VGS = 2.0 Volts Max
The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 12 mm Tape and Reel
Use MMFT6661T1 to order the 7 inch/1000 unit reel
Use MMFT6661T3 to order the 13 inch/4000 unit reel
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
90
Vdc
Gate–to–Source Voltage — Non–Repetitive
VGS
±30
Vdc
Drain Current
ID
500
mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25
°C
PD
0.8
6.4
Watts
mW/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 65 to 150
°C
DEVICE MARKING
T6661
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient
R
θJA
156
°C/W
Maximum Temperature for Soldering Purposes
Time in Solder Bath
TL
260
10
°C
Sec
1. Device mounted on FR–4 glass epoxy printed circuit board using minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMFT6661T1
Motorola Preferred Device
MEDIUM POWER
TMOS FET
500 mA
90 VOLTS
RDS(on) = 4.0 OHM MAX
CASE 318E–04, STYLE 3
TO–261AA
1
2
3
4
2,4 DRAIN
1
GATE
3 SOURCE
REV 4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT6N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER 6.0 AMPERES 30 VOLTS |
| MMFT960T1 | 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMFT960T1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 |
| MMFT960T1G | 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMFTN123 | 制造商:Diotec Semiconductor 功能描述: |
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