参数资料
型号: MMFT960T1G
厂商: ON Semiconductor
文件页数: 1/4页
文件大小: 0K
描述: MOSFET N-CH 60V 300MA SOT223
产品变化通告: Specification Change MSL Updated 2/April/2007
产品目录绘图: MOSFET SOT-223 Pkg
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 300mA
开态Rds(最大)@ Id, Vgs @ 25° C: 1.7 欧姆 @ 1A,10V
Id 时的 Vgs(th)(最大): 3.5V @ 1mA
闸电荷(Qg) @ Vgs: 3.2nC @ 10V
输入电容 (Ciss) @ Vds: 65pF @ 25V
功率 - 最大: 800mW
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 标准包装
产品目录页面: 1558 (CN2011-ZH PDF)
其它名称: MMFT960T1GOSDKR
MMFT960T1
Preferred Device
Power MOSFET
300 mA, 60 Volts
N?Channel SOT?223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc?dc converters,
solenoid and relay drivers. The device is housed in the SOT?223
package which is designed for medium power surface mount
applications.
Features
http://onsemi.com
300 mA, 60 VOLTS
R DS(on) = 1.7 W
N?Channel
?
?
?
?
Silicon Gate for Fast Switching Speeds
Low Drive Requirement
The SOT?223 Package can be Soldered Using Wave or Reflow
The Formed Leads Absorb Thermal Stress During Soldering
G
D
Eliminating the Possibility of Damage to the Die
?
Pb?Free Package is Available
S
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating Symbol Value
Drain?to?Source Voltage V DS 60
Unit
V
1
2
4
TO?261AA
CASE 318E
STYLE 3
Gate?to?Source Voltage ? Non?Repetitive
Drain Current
Total Power Dissipation @ T A = 25 ° C
(Note 1)
Derate above 25 ° C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction?to?Ambient
V GS
I D
P D
T J , T stg
R q JA
± 30
300
0.8
6.4
?65 to 150
156
V
mAdc
W
mW/ ° C
° C
° C/W
3
MARKING DIAGRAM AND
PIN ASSIGNMENT
4 Drain
AYW
FT960 G
G
Maximum Temperature for Soldering
Purposes
T L
260
° C
1
Gate
2
Drain
3
Source
Time in Solder Bath 10 S
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR?4 glass epoxy printed circuit board using minimum
A = Assembly Location
Y = Year
W = Work Week
G = Pb?Free Package
FT960 = Device Code
(Note: Microdot may be in either location)
recommended footprint.
ORDERING INFORMATION
Device
MMFT960T1
MMFT960T1G
Package
SOT?223
SOT?223
Shipping ?
1000 Tape & Reel
1000 Tape & Reel
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
January, 2006 ? Rev. 5
1
Publication Order Number:
MMFT960T1/D
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