- 您现在的位置：买卖IC网 > PDF目录95981 > MMPQ2907L86Z (FAIRCHILD SEMICONDUCTOR CORP) 600 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MMPQ2907L86Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOIC-16 |
| 文件页数： | 2/8页 |
| 文件大小： | 200K |
| 代理商： | MMPQ2907L86Z |
MMPQ2907
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Spice Model
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown
Voltage*
IC = 10 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, IC = 0
5.0
V
IEBO
Emitter Cutoff Current
VEB = 30 V
50
nA
ICBO
Collector Cutoff Current
VCB = 30 V
50
nA
hFE
DC Current Gain
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V*
IC = 300 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V*
75
100
30
50
300
VCE(sat)
Collector-Emitter Saturation
Voltage*
IC = 150 mA, IB = 15 mA
IC = 300 mA, IB = 30 mA
0.4
1.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA*
IC = 300 mA, IB = 30 mA
1.3
2.6
V
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
T
YPICA
L
PU
L
S
ED
CURRENT
GA
IN
C
F
E
125 °C
25 °C
- 40 °C
V
= 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
110
100
500
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRENT (mA)
V
-
COL
L
ECTOR
E
M
IT
TER
VO
L
T
A
G
E
(V)
C
E
S
A
T
ββββ = 10
25 °C
- 40 C
125 C
相关PDF资料 |
PDF描述 |
|---|---|
| MMPQ3467/S62Z | 1200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ3467/D84Z | 1200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ3467/L99Z | 1200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ3467 | 1200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ3467R1 | 4 CHANNEL, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMPQ3467 | 功能描述:两极晶体管 - BJT 1A 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ3725 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN Switching Transistor |
| MMPQ3725 WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ3904 | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ3904_Q | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。