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参数资料
| 型号： | MMPQ3467R2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR |
| 封装： | CASE 751B-05, SOP-16 |
| 文件页数： | 1/4页 |
| 文件大小： | 143K |
| 代理商： | MMPQ3467R2 |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
Publication Order Number:
MMPQ3467/D
MMPQ3467
Quad Memory Driver
Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
40
Vdc
CollectorBase Voltage
VCB
40
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current —
Continuous
IC
1.0
Adc
Each
Transistor
Four
Transistors
Equal
Power
Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
0.52
4.2
1.2
9.6
W
mW/°C
Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.0
8.0
2.5
20
W
mW/°C
Operating and Storage
Junction Temperature
Range
TJ, Tstg
55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
CollectorBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
—
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
200
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
—
200
nAdc
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
http://onsemi.com
1
16
CASE 751B05, STYLE 4
SO16
1
2
3
4
5
6
7
8
10
11
12
13
14
15
16
9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMPQ3725 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN Switching Transistor |
| MMPQ3725 WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ3904 | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ3904_Q | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ3904-CUT TAPE | 制造商:FAIRCHILD 功能描述:MMPQ39 Series NPN 1 W 40 V 200 mA General Purpose Transistor - SOIC-16 |
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