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参数资料
| 型号： | MMPQ3725 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封装： | CASE 751B-05, SO-16 |
| 文件页数： | 2/4页 |
| 文件大小： | 42K |
| 代理商： | MMPQ3725 |
MMPQ3725
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
35
25
75
45
200
—
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
0.32
0.45
Vdc
Base–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.8
0.9
1.1
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
—
275
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
5.1
—
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
—
62
—
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = 500 mAdc, IB1 = 50 mAdc, VBE(off) = –3.8 Vdc)
ton
—
20
—
ns
Turn–Off Time
(IC = 500 mAdc, IB1 = IB2 = 50 mAdc)
toff
—
50
—
ns
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
相关PDF资料 |
PDF描述 |
|---|---|
| MMPQ3725 | 4 CHANNEL, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ3725/D84Z | 1200 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ3725/L99Z | 1200 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ3725/S62Z | 1200 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ3799R1 | 200 mA, 60 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SO-16 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMPQ3725 WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ3904 | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ3904_Q | 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ3904-CUT TAPE | 制造商:FAIRCHILD 功能描述:MMPQ39 Series NPN 1 W 40 V 200 mA General Purpose Transistor - SOIC-16 |
| MMPQ3904R1 | 功能描述:两极晶体管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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