参数资料
型号: MMPQ3725L86Z
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MS-012
封装: SOIC-16
文件页数: 5/7页
文件大小: 260K
代理商: MMPQ3725L86Z
SOIC-16 Tape and Reel Data, continued
July 1999, Rev. B
P1
A0
D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
16mm
13" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.646 +0.078/-0.000
16.4 +2/0
0.882
22.4
0.626 – 0.764
15.9 – 19.4
13" Diameter Option
Dim A
Max
W3
W2 max Measured at Hub
W1 Measured at Hub
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum component rotation
0.9mm
maximum
0.9mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
10 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
SOIC(16lds) Embossed Carrier Tape
Configuration: Figure 3.0
SOIC(16lds) Reel Configuration: Figure 4.0
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
SOIC(16lds)
(16mm)
6.60
+/-0.30
10.35
+/-0.25
16.0
+/-0.3
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
14.25
min
7.50
+/-0.05
8.0
+/-0.1
4.0
+/-0.1
2.40
+/-0.40
0.450
+/-0.150
13.0
+/-0.3
0.06
+/-0.02
Dim D
min
Dim C
B Min
DETAIL AA
See detail AA
Dim A
max
Dim N
相关PDF资料
PDF描述
MMPQ3725R2 1 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
MMPQ3725R1 4 CHANNEL, Si, POWER TRANSISTOR
MMPQ3725R2 4 CHANNEL, Si, POWER TRANSISTOR
MMPQ3725 1 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
MMPQ3725 4 CHANNEL, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
MMPQ3904 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMPQ3904_Q 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMPQ3904-CUT TAPE 制造商:FAIRCHILD 功能描述:MMPQ39 Series NPN 1 W 40 V 200 mA General Purpose Transistor - SOIC-16
MMPQ3904R1 功能描述:两极晶体管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMPQ3904R2 功能描述:两极晶体管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2