参数资料
型号: MMPQ3904
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 200 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: CASE 751B-05, SOIC-16
文件页数: 1/3页
文件大小: 0K
代理商: MMPQ3904
Semiconductor Components Industries, LLC, 2002
December, 2002 Rev. 3
Publication Order Number:
MMPQ3904/D
1109
MMPQ3904
Preferred Device
Quad Amplifier/Switch
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
40
Vdc
Collector Base Voltage
VCB
60
Vdc
Emitter Base Voltage
VEB
6.0
Vdc
Collector Current Continuous
IC
200
mAdc
Each
Transistor
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
200
3.2
mW
mW/
°C
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
0.66
5.3
Watts
mW/
°C
Four
Transistors
Equal Power
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
800
6.4
mW
mW/
°C
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.92
15.4
Watts
mW/
°C
Operating and Storage
Junction Temperature Range
TJ, Tstg
55 to +150
°C
SO16
CASE 751B
STYLE 4
MARKING DIAGRAM
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMPQ3904
SO16
48 Units/Rail
MMPQ3904
AWLYWW
MMPQ3904 = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
Y
= Year
WW
= Work Week
http://onsemi.com
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16
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16
9
相关PDF资料
PDF描述
MMPQ3904R2 200 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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MMPQ3904R2G 200 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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MMS8550-L-TP 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
MMPQ3904_Q 功能描述:两极晶体管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMPQ3904-CUT TAPE 制造商:FAIRCHILD 功能描述:MMPQ39 Series NPN 1 W 40 V 200 mA General Purpose Transistor - SOIC-16
MMPQ3904R1 功能描述:两极晶体管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMPQ3904R2 功能描述:两极晶体管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMPQ3906 功能描述:两极晶体管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2