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参数资料
| 型号： | MMPQ3906S62Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOIC-16 |
| 文件页数： | 2/6页 |
| 文件大小： | 84K |
| 代理商： | MMPQ3906S62Z |
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage*
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, IC = 0
5.0
V
IBL
Base Cutoff Current
VCE = 30 V, VBE = 3.0 V
50
nA
ICEX
Collector Cutoff Current
VCE = 30 V, VBE = 3.0 V
50
nA
hFE
DC Current Gain *
IC = 0.1 mA, VCE = 1.0 V
MMPQ3906
IC = 1.0 mA, VCE = 1.0 V
MMPQ3906
IC = 10 mA, VCE = 1.0 V
MMPQ3906
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
60
40
80
60
100
75
60
30
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.25
0.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.65
0.85
0.95
V
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
200
MHz
Cobo
Output Capacitance
VCB = 5.0 V, IE = 0,
f = 140 kHz
4.5
pF
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0,
f = 140 kHz
10
pF
PNP Multi-Chip General Purpose Amplifier
(continued)
FFB3906
/
FMB3906
/
MMPQ3906
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
SMALL SIGNAL CHARACTERISTICS (MMPQ3906 only)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMPQ6502 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:SURFACE MOUNT COMPLEMENTARY SILICON QUAD TRANSISTOR |
| MMPQ6700 | 功能描述:两极晶体管 - BJT NPN/PNP Transistor Gen Purp Quad RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ6700_Q | 功能描述:两极晶体管 - BJT NPN/PNP Transistor Gen Purp Quad RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ6700R1 | 功能描述:两极晶体管 - BJT 200mA 40V Quad RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMPQ6842 | 制造商:Motorola Inc 功能描述: |
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