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参数资料
| 型号： | MMQA33VT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封装： | PLASTIC, SC-59, 6 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 104K |
| 代理商： | MMQA33VT1 |
MOTOROLA
2
MMQA Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
Max Reverse
Leakage Current
Max Zener
Impedance (7)
Max Reverse
Surge
Max Reverse
Voltage @
IRSM(6)
Maximum
Temperature
VZT (5)
(V)
@ IZT
IR
VR
Impedance (7)
Surge
Current
IRSM(6)
(Clamping
Voltage)
p
Coefficient of
VZ
Device
Min
Nom
Max
(mA)
(nA)
(V)
ZZT @ IZT
(
)
(mA)
IRSM(4)
(A)
VRSM
(V)
(mV/
°C)
MMQA5V6T1,T3
5.32
5.6
5.88
1.0
2000
3.0
400
3.0
8.0
1.26
MMQA6V2T1,T3
5.89
6.2
6.51
1.0
700
4.0
300
2.66
9.0
10.6
MMQA6V8T1,T3
6.46
6.8
7.14
1.0
500
4.3
300
2.45
9.8
10.9
MMQA12VT1,T3
11.4
12
12.6
1.0
75
9.1
80
1.39
17.3
14
MMQA13VT1,T3
12.4
13
13.7
1.0
75
9.8
80
1.29
18.6
15
MMQA15VT1,T3
14.3
15
15.8
1.0
75
11
80
1.1
21.7
16
MMQA18VT1,T3
17.1
18
18.9
1.0
75
14
80
0.923
26
19
MMQA20VT1,T3
19
20
21
1.0
75
15
80
0.84
28.6
20.1
MMQA21VT1,T3
20
21
22.1
1.0
75
16
80
0.792
30.3
21
MMQA22VT1,T3
20.9
22
23.1
1.0
75
17
80
0.758
31.7
22
MMQA24VT1,T3
22.8
24
25.2
1.0
75
18
100
0.694
34.6
25
MMQA27VT1,T3
25.7
27
28.4
1.0
75
21
125
0.615
39
28
MMQA30VT1,T3
28.5
30
31.5
1.0
75
23
150
0.554
43.3
32
MMQA33VT1,T3
31.4
33
34.7
1.0
75
25
200
0.504
48.6
37
(5)
VZ measured at pulse test current IT at an ambient temperature of 25°C.
(6)
Surge current waveform per Figure 5 and derate per Figure 4.
(7)
ZZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.
NOTE: SPECS LISTED ABOVE ARE PRELIMINARY
TYPICAL CHARACTERISTICS
300
VZ, NOMINAL ZENER VOLTAGE (V)
C,
CAP
ACIT
ANCE
(pF)
250
200
150
100
50
0
5.6
6.8
12
20
27
BIASED AT 0 V
BIASED AT 1 V
BIASED AT 50%
OF VZ NOM
Figure 1. Typical Capacitance
5.6
6.8
20
27
10,000
1,000
100
10
0
Figure 2. Typical Leakage Current
I R
,LEAKAGE
(nA)
VZ, NOMINAL ZENER VOLTAGE (V)
33
+150
°C
+25
°C
–40
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMQA33VT1G | 功能描述:TVS二极管阵列 33V 150W TVS Quad Array RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMQA33VT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SC-74 Quad Monolithic Common Anode |
| MMQA5V6 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Direct ProTek Replacement:SMS05 |Alternative ProTek Replacement:PSMS05 |
| MMQA5V6T | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SC-74 Quad Monolithic Common Anode |
| MMQA5V6T1 | 功能描述:TVS二极管阵列 5.6V 150W TVS Quad RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
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