参数资料
| 型号： | MMQA6V2T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | TVS QUAD CA 24W 6.2V SC74-6 |
| 产品变化通告： | Copper Wire Change 29/Oct/2009 |
| 产品目录绘图： | TVS SC-74 Package |
| 标准包装： | 10 |
| 系列： | MMQA |
| 电压 - 反向隔离（标准值）： | 4V |
| 电压 - 击穿： | 5.89V |
| 功率（瓦特）： | 24W |
| 电极标记： | 4 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | SC-74 |
| 包装： | 标准包装 |
| 产品目录页面： | 2380 (CN2011-ZH PDF) |
| 其它名称： | MMQA6V2T1GOSDKR |
MMQA, SZMMQA Quad Common Anode Series
THERMAL CHARACTERISTICS (T A = 25 ° C Unless Otherwise Noted)
Characteristic
Peak Power Dissipation @ 1.0 ms (Note 1)
@ T A ≤ 25 ° C
Peak Power Dissipation @ 20 m s (Note 2)
@ T A ≤ 25 ° C
Total Power Dissipation on FR-5 Board (Note 3)
@ T A = 25 ° C
Thermal Resistance from Junction ? to ? Ambient
Total Power Dissipation on Alumina Substrate (Note 4)
@ T A = 25 ° C
Derate above 25 ° C
Thermal Resistance from Junction ? to ? Ambient
Junction and Storage Temperature Range
Lead Solder Temperature ? Maximum (10 Second Duration)
1.
Non-repetitive current pulse per Figure 5 and derate above T A = 25 ° C per Figure 4.
Non-repetitive current pulse per Figure 6 and derate above T A = 25 ° C per Figure 4.
2.
3.
FR-5 = 1.0 x 0.75 x 0.62 in.
4.
Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
Symbol
P pk
P pk
P D
R q JA
P D
R q JA
T J , T stg
T L
Value
24
150
225
1.8
556
300
2.4
417
? 55 to +150
260
Unit
W
W
MW
mW/ ° C
° C/W
MW
mW/ ° C
° C/W
° C
° C
ELECTRICAL CHARACTERISTICS (T A = 25 ° C Unless Otherwise Noted)
UNIDIRECTIONAL
(Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (V F = 0.9 V Max @ I F = 10 mA)
Breakdown Voltage
V ZT
(Note 5)
(V) @ I ZT
Max
Reverse
Leakage
Current
I R V R
Max Zener
Impedance
(Note 7)
Max
Reverse
Surge
Current
Max
Reverse
Voltage @
I RSM
(Note 6)
(Clamping
Voltage)
Maximum
Temperature
Coefficient
of V Z
Capacitance
@ 0 Volt
Bias, 1 MHz
(pF)
Device
(Note 8)
MMQA5V6T
MMQA6V2T
MMQA6V8T
MMQA12VT
MMQA13VT
MMQA15VT
MMQA18VT
MMQA20VT
MMQA21VT
MMQA22VT
MMQA24VT
MMQA27VT
MMQA33VT
Min
5.32
5.89
6.46
11.4
12.4
14.3
17.1
19
20
20.9
22.8
25.7
31.4
Nom
5.6
6.2
6.8
12
13
15
18
20
21
22
24
27
33
Max
5.88
6.51
7.14
12.6
13.7
15.8
18.9
21
22.1
23.1
25.2
28.4
34.7
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
(nA)
2000
700
500
75
75
75
75
75
75
75
75
75
75
(V)
3.0
4.0
4.3
9.1
9.8
11
14
15
16
17
18
21
25
Z ZT @ I ZT
( W ) (mA)
400
300
300
80
80
80
80
80
80
80
100
125
200
I RSM
(A)
3.0
2.66
2.45
1.39
1.29
1.1
0.923
0.84
0.792
0.758
0.694
0.615
0.504
V RSM
(V)
8.0
9.0
9.8
17.3
18.6
21.7
26
28.6
30.3
31.7
34.6
39
48.6
(mV/ ° C)
1.26
10.6
10.9
14
15
16
19
20.1
21
22
25
28
37
Min
?
?
100
?
?
?
?
?
?
?
?
?
?
Max
?
?
250
?
?
?
?
?
?
?
?
?
?
5. V Z measured at pulse test current I T at an ambient temperature of 25 ° C.
6. Surge current waveform per Figure 5 and derate per Figure 4.
7. Z ZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are I Z(AC) = 0.1 I Z(DC) ,
with AC frequency = 1 kHz.
8. Include SZ-prefix devices where applicable.
http://onsemi.com
2
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