参数资料
型号: MMSD301T1
厂商: ON Semiconductor
文件页数: 1/5页
文件大小: 137K
描述: DIODE SCHOTTKY 225MW 30V SOD123
产品变化通告: Wire Change 08/Jun/2009
标准包装: 10
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 200mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 600mV @ 10mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 200nA @ 25V
电容@ Vr, F: 1.5pF @ 0V,1MHz
安装类型: 表面贴装
封装/外壳: SOD-123
供应商设备封装: SOD-123
包装: 剪切带 (CT)
其它名称: MMSD301T1OSCT
?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 6
1
Publication Order Number:
MMSD301T1/D
MMSD301T1G,
SMMSD301T1G,
MMSD701T1G,
SMMSD701T1G,
SOD-123 Schottky
Barrier Diodes
The MMSD301T1, and MMSD701T1 devices are spin?offs of our
popular MMBD301LT1, and MMBD701LT1 SOT?23 devices. They
are designed for high?efficiency UHF and VHF detector applications.
Readily available to many other fast switching RF and digital
applications.
Features
?
Extremely Low Minority Carrier Lifetime
?
Very Low Capacitance
?
Low Reverse Leakage
?
AEC Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MMSD301T1G, SMMSD301T1G
MMSD701T1G, SMMSD701T1G
VR
30
70
Vdc
Forward Current (DC) Continous
IF
200
mA
Forward Power Dissipation
TA
= 25
?C
PF
225
mW
Junction Temperature
TJ
?55 to +125
?C
Storage Temperature Range
Tstg
?55 to +150
?C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING DIAGRAM
SOD?123
CASE 425
STYLE 1
Device Package Shipping?
ORDERING INFORMATION
MMSD301T1G SOD?123
(Pb?Free)
3,000 /
Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
xx = Specific Device Code
XT = MMSD301T1G
SMMSD301T1G
XH = MMSD701T1G
SMMSD701T1G
M = Date Code
= Pb?Free Package
1
Cathode
2
Anode
MMSD701T1G SOD?123
(Pb?Free)
3,000 /
Tape & Reel
XXX M
1
(Note: Microdot may be in either location)
SMMSD301T1G SOD?123
(Pb?Free)
3,000 /
Tape & Reel
SMMSD701T1G SOD?123
(Pb?Free)
3,000 /
Tape & Reel
相关PDF资料
PDF描述
MC14489BPE IC LED DRIVER 5-CH CMOS 20-DIP
202S48W103KV4E CAP CER 10000PF 2KV 10% X7R 2225
SRP7030-1R1FM INDUCTOR POWER 1.1UH SHIELD SMD
SRP7030-R47FM INDUCTOR POWER 0.47UH SHIELD SMD
RCB92DHRT-S378 EDGECARD EXT PCI64 184PS .050 5V
相关代理商/技术参数
参数描述
MMSD301T1G 功能描述:肖特基二极管与整流器 30V 225mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MMSD3070 功能描述:整流器 Small Signal Diode RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
MMSD3070_11 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Small Signal Diode
MMSD3070_Q 功能描述:整流器 Small Signal Diode RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
MMSD4148 功能描述:整流器 Hi Conductance Fast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel