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参数资料
| 型号： | MMSF10N03ZR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CASE 751-07, SOP-8 |
| 文件页数： | 1/11页 |
| 文件大小： | 278K |
| 代理商： | MMSF10N03ZR2 |
Publication Order Number:
MMSF10N03Z/D
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
MMSF10N03Z
Preferred Device
Advance Information
Power MOSFET
10 Amps, 30 Volts
NChannel SO8
EZFETs
t are an advanced series of Power MOSFETs contain
monolithic backtoback zener diodes. These zener diodes provide
protection against ESD and unexpected transients. These miniature
surface mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the draintosource diode has
a very low reverse recovery time. EZFET devices are designed for use
in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dcdc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives.
Zener Protected Gates Provide Electrostatic Discharge Protection
Designed to Withstand 200 V Machine Model and 2000 V Human
Body Model
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO8 Package Provided
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Source
1
2
3
4
8
7
6
5
Top View
Source
Gate
Drain
1
8
10 AMPERES
30 VOLTS
RDS(on) = 13 mW
D
S
G
Device
Package
Shipping
ORDERING INFORMATION
MMSF10N03ZR2
SO8
2500 Tape & Reel
SO8
CASE 751
STYLE 12
http://onsemi.com
NChannel
LYWW
MARKING
DIAGRAM
10N03Z
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
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PDF描述 |
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| MMSF3205R2 | 8.6 A, 20 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MMSF3300R2 | 9.1 A, 30 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MMSF3300R2 | 6.7 A, 30 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMSF1310R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMSF2P02E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS |
| MMSF2P02ER2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMSF3205 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 11 AMPERES 20 VOLTS |
| MMSF3300 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 30 VOLTS |
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