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参数资料
| 型号： | MMSF3350R2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 13 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/12页 |
| 文件大小： | 233K |
| 代理商： | MMSF3350R2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Advance Information
WaveFET
Power Surface Mount Products
HDTMOS Single N-Channel
Field Effect Transistor
WaveFET
devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Characterized Over a Wide Range of Power Ratings
Ultralow RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
Logic Level Gate Drive — Can Be Driven by
Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Miniature SO–8 Surface Mount Package —
Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Drain–to–Gate Voltage
VDGR
30
Vdc
Gate–to–Source Voltage
VGS
±20
Vdc
Gate–to–Source Operating Voltage
VGS
±16
Vdc
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, L = 20 mH, IL(pk) = 10 A, VDS = 30 Vdc)
EAS
1000
mJ
DEVICE MARKING
ORDERING INFORMATION
S3350
Device
Reel Size
Tape Width
Quantity
S3350
MMSF3350R2
13
″
12 mm embossed tape
2500 units
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 1
Order this document
by MMSF3350/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1998
CASE 751– 06, Style 12
SO–8
MMSF3350
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 11 mW
D
G
S
Source
1
2
3
4
8
7
6
5
TOP VIEW
Source
Gate
Drain
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| MMSF3P02HDR2SG | 功能描述:MOSFET P-CH 20V 5.6A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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