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参数资料
| 型号： | MMSF5P02HD |
| 厂商： | Motorola, Inc. |
| 英文描述： | SINGLE TMOS POWER MOSFET 8.7 AMPERES 20 VOLTS |
| 中文描述： | 功率MOSFET单任务操作系统20伏特，8.7安培 |
| 文件页数： | 3/12页 |
| 文件大小： | 208K |
| 代理商： | MMSF5P02HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0)
(1) (3)
V(BR)DSS
20
—
—
10
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
8.0 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
25
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0)
(1) (3)
VGS(th)
0.7
—
0.9
2.6
1.4
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 6.4 Adc)
(VGS = 2.5 Vdc, ID = 5.1 Adc)
(Cpk
≥
2.0)
(1) (3)
RDS(on)
—
—
22
35
30
45
m
On–State Drain Current
(VDS
≤
5.0 V, VGS = 4.5 V)
(VDS
≤
5.0 V, VGS = 2.5 V)
ID(on)
10
5.0
—
—
—
—
A
Forward Transconductance (VDS = 9.0 Vdc, ID = 6.4 Adc)
(1)
gFS
14
18
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
16 Vdc V
Ciss
Coss
Crss
—
1400
1960
pF
Output Capacitance
—
925
1300
Transfer Capacitance
—
370
520
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 6.0 Vdc, ID = 1.0 Adc,
VGS= 4 5 Vdc
VGS = 4.5 Vdc,
RG = 6.0
) (1)
6 0 Vd
1 0 Ad
td(on)
tr
td(off)
tf
QT
—
19
40
ns
Rise Time
—
28
55
Turn–Off Delay Time
—
130
200
Fall Time
) ( )
—
90
150
Gate Charge
See Figure 8
(VDS = 6.0 Vdc,D
(DS
VGS = 4.5 Vdc) (1)
6 0 Vd
6 4 Ad
—
27.3
38
nC
Q1
Q2
Q3
—
3.4
—
,
—
12
—
—
8.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 2.5 Adc, VGS = 0 Vdc) (1)
(IS = 2.5 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.77
0.6
1.2
—
Vdc
Reverse Recovery Time
See Figure 15
(IS = 2.5 Adc, VGS
(S
dIS/dt = 100 A/
μ
s) (1)
2 5 Ad
trr
ta
tb
—
95
180
ns
—
35
—
,
—
60
—
Reverse Recovery Stored Charge
QRR
—
0.151
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
Max limit – Typ
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