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| 型号： | MMSF7P03HDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 7A 8-SOIC |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 5.3A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 75.8nC @ 6V |
| 输入电容 (Ciss) @ Vds： | 1680pF @ 24V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
MMSF7P03HD
Preferred Device
Power MOSFET
7 A, 30 V, P?Channel SO?8
These miniature surface mount devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are DC?DC converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
http://onsemi.com
7 A, 30 V ? R DS(on) = 35 m W
disk drives and tape drives.
Features
D
P?Channel
? Low R DS(on) Provides Higher Efficiency and Extends Battery Life
? Logic Level Gate Drive ? Can Be Driven by Logic ICs
? Miniature SO?8 Surface Mount Package ? Saves Board Space
? Diode Is Characterized for Use In Bridge Circuits
? Diode Exhibits High Speed, With Soft Recovery
? I DSS Specified at Elevated Temperature
? Mounting Information for SO?8 Package Provided
? Pb?Free Package is Available
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol Value Unit
8
1
G
S
SO?8
CASE 751
STYLE 12
8
1
MARKING
DIAGRAM
S7P03
AYWW G
G
Drain?to?Source Voltage
V DSS
30
Vdc
S7P03 = Device Code
Gate?to?Source Voltage
Continuous
V GS
± 20
Vdc
A = Assembly Location
Y = Year
Drain Current
Continuous @ T A = 25 ° C
Single Pulse (t p ≤ 10 m s)
I D
I DM
7.0
50
Adc
Apk
WW = Work Week
G = Pb?Free Package
Source Current ? Continuous @ T A = 25 ° C
Total Power Dissipation @ T A = 25 ° C
(Note 1)
I S
P D
2.3
2.5
Adc
W
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 30 Vdc, V GS = 5.0 Vdc,
T J , T stg
E AS
? 55 to 150
500
° C
mJ
Source
Source
Source
1
2
3
8
7
6
Drain
Drain
Drain
V DS = 32 Vdc, I L = 10 Apk,
L = 10 mH, R G = 25 W )
Thermal Resistance, Junction?to?Ambient
R q JA
50
° C/W
Gate
4 5
Top View
Drain
Maximum Temperature for Soldering
T
260
° C
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When mounted on 1 in square FR?4 or G?10 (V GS = 10 V @ 10 seconds)
Device
MMSF7P03HDR2
MMSF7P03HDR2G
Package
SO?8
SO?8
(Pb?Free)
Shipping ?
2500 / Tape&Reel
2500 / Tape&Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
February, 2006 ? Rev. 7
1
Publication Order Number:
MMSF7P03HD/D
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